Datasheet > IXGR48N60B3D1

IXGR48N60B3D1

更新时间： 2024-04-02 21:14:44

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
3页	176K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGR48N60B3D1 数据手册

Preliminary Technical Information

GenX3^TM600V IGBTs

V_CES= 600V

I_C25= 60A

V_CE(sat)≤ 2.1V

t_fi(typ)= 116ns

IXGR48N60B3*

IXGR48N60B3D1

(Electrically Isolated Back

Surface)

*ObsoletePartNumber

Medium-Speed Low-Vsat PT

IGBTs 5-40 kHz Switching

ISOPLUS247^TM

E153432

IXGR_B3

IXGR_B3D1

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

600

V_GES

V_GEM

Continuous

Transient

± 20

± 30

Isolated Tab

I_C25

I_C110

I_F110

T_C= 25°C

T_C= 110°C

T_C= 110°C (48N60B3D1)

G = Gate

C = Collector

E = Emitter

I_CM

T_C= 25°C, 1ms

280

SSOA

_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 120

(RBSOA)

Clamped Inductive Load

@ ≤ V_CE

Features

P_C

T_C= 25°C

150

^zSilocon Chip on Direct-Copper Bond

(DCB) Substrate

T_J

-55 ... +150

150

°C

^zIsolated Mounting Surface

^zOptimized for Low Conduction and

Switching Losses

T_JM

T_stg

-55 ... +150

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

^z2500V~ Electrical Isolation

^zAnti-Parallel Ultra Fast Diode

^zSquare RBSOA

T_SOLD

F_C

Mounting Force

20..120 / 4.5..27

N/lb.

V_ISOL

50/60 Hz, RM, t = 1min

2500

Advantages

Weight

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

600

3.0

Applications

5.5

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

I_CES

V_CE= V_CES, V_GE= 0V

48N60B3

25 μA

48N60B3D1

1.75 mA

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= 40A, V_GE= 15V, Note 1

1.77

1.74

2.1

T_J= 125°C

DS99743B(02/11)

12 3

中文翻译

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与IXGR48N60B3D1相关器件

型号	品牌	获取价格	描述	数据表
IXGR48N60C3D1	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGR48N60C3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGR50N160H1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 1600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS24
IXGR50N60A2U1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
IXGR50N60B	IXYS	获取价格	HiPerFAST IGBT ISOPLUS247
IXGR50N60B2	IXYS	获取价格	B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
IXGR50N60B2D1	IXYS	获取价格	B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
IXGR50N60BD1	IXYS	获取价格	HiPerFAST IGBT ISOPLUS247
IXGR50N60C2	IXYS	获取价格	HiPerFAST IGBT with Diode C2-Class High Speed IGBTs
IXGR50N60C2D1	IXYS	获取价格	HiPerFAST IGBT with Diode C2-Class High Speed IGBTs

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