5秒后页面跳转
IXGR39N60BD1 PDF预览

IXGR39N60BD1

更新时间: 2024-02-22 17:32:06
品牌 Logo 应用领域
IXYS 电动机控制晶体管
页数 文件大小 规格书
2页 514K
描述
Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

IXGR39N60BD1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:ISOPLUS
包装说明:ISOPLUS247, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):66 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):140 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):710 ns标称接通时间 (ton):55 ns
Base Number Matches:1

IXGR39N60BD1 数据手册

 浏览型号IXGR39N60BD1的Datasheet PDF文件第2页 
HiPerFASTTM IGBT  
VCES = 600 V  
IC25 = 66 A  
VCE(sat) = 1.8 V  
tfi(typ) = 200 ns  
IXGR 39N60B  
IXGR 39N60BD1  
ISOPLUS247TM  
(Electrically Isolated Backside)  
Preliminary data sheet  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
Isolated Backside*  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
66  
35  
152  
A
A
A
G = Gate,  
E=Emitter  
C = Collector  
SSOA  
V
= 15 V, T = 125°C, RG = 10 Ω  
I
= 76  
A
(RBSOA)  
CGlaE mped indVuJctive load, L = 100 µH  
@ 0C.8M VCES  
* Patent pending  
PC  
TC = 25°C  
140  
W
VISOL  
50/60 Hz RMS t = 1 minute  
2500  
V
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
DCB Isolated mounting tab  
z
z
z
z
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
- drive simplicity  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Weight  
Symbol  
5
g
Applications  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z
Uninterruptible power supplies (UPS)  
Min. Typ. Max.  
z
Switched-mode and resonant-mode  
BVCES  
VGE(th)  
ICES  
I
= 250 µA, VGE = 0 V  
39N60B  
600  
600  
V
ICC = 750 µA  
39N60BD1  
power supplies  
z
AC motor speed control  
z
I
= 250 µA, VCE = VGE  
39N60B  
2.5  
5.0  
5.0  
V
V
DC servo and robot drives  
DC choppers  
ICC = 500 µA  
39N60BD1 2.5  
z
VCE = 0.8 • VCES TJ = 25°C  
VGE = 0 V; note 1 TJ = 25°C  
TJ = 125°C  
39N60B  
200 µA  
650 µA  
39N60BD1  
39N60B  
Advantages  
1
3
mA  
mA  
TJ = 125°C  
39N60BD1  
z Easy assembly  
z
High power density  
Very fast switching speeds for high  
frequency applications  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
1.8  
z
VCE(sat)  
IC = IT, VGE = 15 V  
V
© 2004 IXYS All rights reserved  
DS98738B(01/04)  

IXGR39N60BD1 替代型号

型号 品牌 替代类型 描述 数据表
IXGR72N60B3H1 IXYS

功能相似

GenX3 600VIGBT W/ Diode Electrically Isolated Tab

与IXGR39N60BD1相关器件

型号 品牌 获取价格 描述 数据表
IXGR40N60B LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
IXGR40N60B2 IXYS

获取价格

C2-Class High Speed IGBTs (Electrically Isolated Back Surface)
IXGR40N60B2D1 IXYS

获取价格

C2-Class High Speed IGBTs (Electrically Isolated Back Surface)
IXGR40N60BD1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
IXGR40N60C IXYS

获取价格

HiPerFAST IGBT ISOPLUS247
IXGR40N60C2 IXYS

获取价格

HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs
IXGR40N60C2D1 IXYS

获取价格

HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs
IXGR40N60CD1 IXYS

获取价格

HiPerFAST IGBT ISOPLUS247
IXGR45N120 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), N-Channel, ISOPLUS247, 3 PIN
IXGR48N60B3 IXYS

获取价格

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications