是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | ISOPLUS |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 66 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 140 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 710 ns |
标称接通时间 (ton): | 55 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGR39N60BD1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | |
IXGR40N60B | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | |
IXGR40N60B2 | IXYS |
获取价格 |
C2-Class High Speed IGBTs (Electrically Isolated Back Surface) | |
IXGR40N60B2D1 | IXYS |
获取价格 |
C2-Class High Speed IGBTs (Electrically Isolated Back Surface) | |
IXGR40N60BD1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | |
IXGR40N60C | IXYS |
获取价格 |
HiPerFAST IGBT ISOPLUS247 | |
IXGR40N60C2 | IXYS |
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HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs | |
IXGR40N60C2D1 | IXYS |
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HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs | |
IXGR40N60CD1 | IXYS |
获取价格 |
HiPerFAST IGBT ISOPLUS247 | |
IXGR45N120 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), N-Channel, ISOPLUS247, 3 PIN |