Datasheet > IXGR32N90B2D1

IXGR32N90B2D1

更新时间： 2024-11-05 21:10:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
8页	244K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXGR32N90B2D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

IXGR32N90B2D1 数据手册

Advance Technical Information

HiPerFAST^TMIGBT

with Fast Diode

V_CES

I_C25

= 900 V

= 47 A

IXGR 32N90B2D1

V_CE(sat)= 2.9 V

t_fityp= 150 ns

Electrically Isolated Base

Symbol

TestConditions

Maximum Ratings

ISOPLUS247(IXGR)

E153432

V_CES

V_CGR

T_J= 25^OC to 150^OC

900

T_J= 25^OC to 150^OC; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C110

I_CM

T_C= 25^OC

ISOLATED TAB

C = Collector

T_C= 110^OC

T_C= 25^OC, 1 ms

G = Gate

E = Emitter

200

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125^OC, R_G= 10 Ω

Clamped inductive load: V_CL< 600V

I_CM= 64

Features

P_C

T_C= 25^OC

160

y Electrically isolated mounting tab

^OC

y High frequency IGBT

y High current handling capability

y MOS Gate turn-on

T_J

-55 ... +150

150

T_JM

T_stg

-55 ... +150

- drive simplicity

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

^OC

Applications

y PFC circuits

y Uninterruptible power supplies (UPS)

y Switched-mode and resonant-mode

power supplies

V_ISOL

50/60Hz, RMS, T= I minute

I_isol< 1mA

2500

3000

F_C

Mounting force

20..120/4.5..26

N/lb

y AC motor speed control

y DC servo and robot drives

y DC choppers

Weight

Symbol

TestConditions

Characteristic Values

(T_J= 25^OC unless otherwise specified)

min. typ. max.

Advantages

y High power density

V_GE(th)

I_CES

I_C= 250 μA, V_CE= V_GE

3.0

5.0

y Very fast switching speeds for high

frequency applications

V_CE= V_CES

V_GE= 0 V

300

1.5 mA

μA

T_J= 150^OC

T_J= 125^OC

I_GES

V_CE= 0 V, V_GE= ± 20 V

I_C= I_T, V_GE= 15 V, Note 1

±100

2.9

V_CE(sat)

2.1

DS99457(12/05)

12 3 4 5 6 7 8

中文翻译

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