是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-247AD |
包装说明: | ISOPLUS247, TO-247AD, 3 PIN | 针数: | 247 |
Reach Compliance Code: | compliant | 风险等级: | 8.53 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 48 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 430 ns | 标称接通时间 (ton): | 54 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGR24N60B | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 48A I(C), N-Channel, ISOPLUS247, 3 PIN |
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IXGR24N60C | IXYS |
获取价格 |
HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface) |
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IXGR24N60CD1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN |
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IXGR32N170AH1 | IXYS |
获取价格 |
High Voltage IGBT with Diode |
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IXGR32N170AH1 | LITTELFUSE |
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功能与特色: 应用:? |
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IXGR32N170H1 | IXYS |
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Advance Technical Information |
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IXGR32N170H1 | LITTELFUSE |
获取价格 |
功能与特色: 应用:? |
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IXGR32N60C | IXYS |
获取价格 |
HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package(Electrically Isolated Back Side) |
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IXGR32N60CD1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode ISOPLUS247 |
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IXGR32N90B2D1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, |
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