Datasheet > IXGH48N60C3D1

IXGH48N60C3D1

更新时间： 2024-11-19 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	229K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGH48N60C3D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

IXGH48N60C3D1 数据手册

GenX3^TM600V IGBT

with Diode

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 48A

≤ 2.5V

= 38ns

IXGH48N60C3D1

High speed PT IGBT for

40-100kHz Switching

TO-247

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

600

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

I_C25

Continuous

±20

±30

Transient

( TAB )

T_C= 25°C (Limited by Leads)

T_C= 110°C

I_C110

I_D110

I_CM

G = Gate

E = Emitter

= Collector

T_C= 110°C

TAB = Collector

T_C= 25°C, 1ms

T_C= 25°C

250

I_A

E_AS

T_C= 25°C

300

Features

SSOA

(RBSOA)

P_C

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

Clamped Inductive Load

T_C= 25°C

I_CM= 100

@V_CE< 600

300

^zOptimized for Low Switching Losses

^zSquare RBSOA

^zAnti-Parallel Ultra Fast Diode

^zFast Switching

T_J

-55 ... +150

150

°C

T_JM

T_stg

^zAvalanche Rated

-55 ... +150

^zInternational Standard Package

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 Seconds

300

260

°C

T_SOLD

Advantages

F_C

Mounting Torque

1.13/10

Nm/lb.in

^zHigh Power Density

^zLow Gate Drive Requirement

Weight

Applications

^zHigh Frequency Power Inverters

^zUPS

Symbol

Test Conditions

Characteristic Values

^zMotor Drives

(T_J= 25°C, Unless Otherwise Specified)

V_GE(th)I_C= 250μA, V_CE= V_GE

I_CES

Min.

Typ.

Max.

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

3.0

5.5

V_CE= V_CES

V_GE= 0V

300 μA

1.75 mA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C

= 30A, V_GE= 15V, Note 1

T_J= 125°C

2.3

1.8

2.5

DS99945A(01/09)

12 3 4 5 6 7 8

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