Datasheet > IXGH28N140B3H1

IXGH28N140B3H1

更新时间： 2024-11-26 14:56:31

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	276K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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数据手册

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IXGH28N140B3H1 数据手册

GenX3^TM1400V

IGBTs w/ Diode

V_CES= 1400V

I_C110= 28A

V_CE(sat)≤ 3.60V

IXGH28N140B3H1

IXGX28N140B3H1

IXGK28N140B3H1

Avalanche Rated

TO-247 (IXGH)

Tab

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

PLUS247 (IXGX)

1400

±20

V_CGR

V_GES

V_GEM

Transient

±30

I_C25

I_C110

I_F110

I_CM

T_C= 25°C

Tab

T_C= 110°C

T_C= 25°C, 1ms

TO-264 (IXGK)

150

I_A

E_AS

T_C= 25°C

360

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

Clamped Inductive Load

I_CM= 120

@ V_CES< V_CE

Tab

P_C

T_C= 25°C

300

G = Gate

C = Collector

= Emitter

T_J

-55 ... +150

150

°C

Tab = Collector

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Optimized for Low Conduction and

Switching Losses

Square RBSOA

Avalanche Rated

Anti-Parallel Ultra Fast Diode

High Current Handling Capability

M_d

F_C

Mounting Torque (IXGH & IXGK)

Mounting Force (IXGX)

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Weight

TO-247 & PLUS247

TO-264

Advantages

High Power Density

Low Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

V_CE= V_CES, V_GE= 0V

50 μA

Note 2, T_J= 125°C

1 mA

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 1

T_J= 125°C

3.00

3.05

3.60

DS99736A(11/10)

12 3 4 5 6 7 8

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