Datasheet > IXGH25N250

IXGH25N250

更新时间： 2024-11-26 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		电机驱动双极性晶体管
页数	文件大小	规格书
6页	240K
描述
NPT IGBT拥有方形RBSOA和10 us的短路耐受能力。具有正温度系数Vce(sat)，是并联的理想选择。该系列产品是电机驱动应用的首选。借助这种IGBT，电路中原本采用多个级联低压开

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中文翻译

获取价格

数据手册

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IXGH25N250 数据手册

Preliminary Technical Information

IXGH25N250

IXGT25N250

IXGV25N250S

V_CES= 2500 V

I_C25= 60 A

V_CE(sat)≤ 2.9 V

High Voltage IGBT

For Capacitor Discharge

Applications

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

2500

C (TAB)

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-268 (IXGT)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

C (TAB)

T_C= 25°C, V_GE= 20 V, 1 ms

200

SSOA

(RBSOA)

_GE= 20 V, T_J= 125°C, R_G= 20 Ω

I_CM= 240

PLUS220SMD (IXGV...S)

Clamped inductive load @ 1250V

P_C

T_C= 25°C

250

T_J

-55 ... +150

150

°C

T_JM

T_stg

C (TAB)

-55 ... +150

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_L

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

T_SOLD

M_d

Mounting torque (TO-247)

1.13/10 Nm/lb-in

Features

ꢀ

Weight

TO-247

TO-268

High peak current capability

Low saturation voltage

MOS Gate turn-on

ꢀ

-drive simplicity

ꢀ

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Rugged NPT structure

Molding epoxies meet UL94V-0

flammability classification

Min. Typ. Max.

BV_CES

V_GE(th)

I_C= 250 μA, V_GE= 0 V

I_C= 250 μA, V_CE= V_GE

2500

3.0

Applications

5.0

ꢀ

Capacitor discharge

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

μA

ꢀ

Pulser circuits

T_J= 125°C

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

Advantages

V_CE(sat)

I_C= 25 A, V_GE= 15 V

I_C= 75 A

2.9

5.2

ꢀ

High power density

Suitable for surface mounting

Easy to mount with 1 screw,

ꢀ

(isolated mounting screw hole)

DS99760 (04/07)

12 3 4 5 6

中文翻译

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