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IXFZ520N075T2 PDF预览

IXFZ520N075T2

更新时间: 2024-10-15 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 222K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXFZ520N075T2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.76
Base Number Matches:1

IXFZ520N075T2 数据手册

 浏览型号IXFZ520N075T2的Datasheet PDF文件第2页浏览型号IXFZ520N075T2的Datasheet PDF文件第3页浏览型号IXFZ520N075T2的Datasheet PDF文件第4页浏览型号IXFZ520N075T2的Datasheet PDF文件第5页浏览型号IXFZ520N075T2的Datasheet PDF文件第6页浏览型号IXFZ520N075T2的Datasheet PDF文件第7页 
TrenchT2TM  
VDSS = 75V  
ID25 = 420A  
RDS(on) 1.6m  
IXFZ520N075T2  
GigaMOSTM HiperFETTM  
Power MOSFET  
(Electrically Isolated Tab)  
DE475  
D
N-Channel Enhancement Mode  
Avalanche Rated  
D
D
Fast Intrinsic Diode  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
75  
75  
V
V
S
Isolated Tab  
D = Drain  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
S = Source  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
420  
A
A
1560  
IA  
TC = 25C  
TC = 25C  
200  
3
A
J
Features  
EAS  
PD  
TC = 25C  
600  
W
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
C  
C  
C  
Isolated Substrate  
- Excellent Thermal Transfer  
- Increased Temperature and Power  
Cycling Capability  
VISOL  
50/60 Hz, RMS  
IISOL 1mA  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
- High Isolation Voltage (2500V~)  
175°C Operating Temperature  
Very High Current Handling  
Capability  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
C  
C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500  
V~  
Fast Intrinsic Diode  
Avalanche Rated  
FC  
20..120 / 4.5..27  
3
N/lb.  
g
Very Low RDS(on)  
Weight  
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
Applications  
2.0  
4.0  
DC-DC Converters and Off-Line UPS  
Primary-Side Switch  
High Speed Power Switching  
Applications  
200 nA  
IDSS  
10 A  
1.5 mA  
TJ = 150C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
1.6 m  
DS100250B(4/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

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