Polar3TM HiPerFETTM
Power MOSFET
VDSS = 600V
ID25 = 80A
RDS(on) 77m
IXFK80N60P3
IXFX80N60P3
trr
250ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrinsic Diode
G
D
S
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
600
600
V
V
Tab
VGSS
VGSM
Continuous
Transient
30
40
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
80
200
A
A
IA
EAS
TC = 25C
TC = 25C
40
2
A
J
G
D
S
Tab
PD
TC = 25C
1300
35
W
dv/dt
IS IDM, VDD VDSS, TJ 150°C
V/ns
G = Gate
D
= Drain
S = Source
Tab = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Diode
Low QG
Low RDS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
Easy to Mount
Space Savings
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
600
V
V
3.0
5.0
Applications
200 nA
DC-DC Converters
Battery Chargers
IDSS
50 A
4 mA
Switch-Mode and Resonant-Mode
Power Supplies
TJ = 125C
Uninterrupted Power Supplies
AC Motor Drives
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
77 m
High Speed Power Switching
Applications
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DS100304B(04/14)