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IXFX60N55Q2 PDF预览

IXFX60N55Q2

更新时间: 2024-02-29 17:36:09
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 94K
描述
HiPerFET Power MOSFETs Q-Class

IXFX60N55Q2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:TO-264AA, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.82
其他特性:AVALANCHE RATED雪崩能效等级(Eas):4000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:550 V最大漏极电流 (ID):60 A
最大漏源导通电阻:0.088 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):240 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON

IXFX60N55Q2 数据手册

 浏览型号IXFX60N55Q2的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerFETTM  
PowerMOSFETs  
Q-Class  
VDSS  
ID25  
RDS(on)  
= 550 V  
IXFK 60N55Q2  
IXFX 60N55Q2  
=
=
60 A  
88 mΩ  
trr 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
Symbol  
TestConditions  
Maximum Ratings  
PLUS247TM (IXFX)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
550  
550  
V
V
VGS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D (TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
60  
240  
60  
A
A
A
G
D
EAR  
EAS  
TC = 25°C  
TC = 25°C  
75  
4.0  
mJ  
J
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
20  
V/ns  
TO-264 AA (IXF
PD  
TC = 25°C  
735  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
S
D (TAB)  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Md  
Mountingtorque  
TO-264  
0.9/6 Nm/lb.in.  
Weight  
PLUS-247  
TO-264  
6
10  
g
g
Features  
z Double metal process for low gate  
resistance  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z International standard packages  
min. typ. max.  
z
Epoxy meet UL 94 V-0, flammability  
classification  
VDSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8 mA  
550  
2.0  
V
V
z Avalanche energy and current rated  
z Fast intrinsic Rectifier  
VGS(th)  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
50 µA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
88 mΩ  
z
High power density  
DS98984(12/02)  
© 2002 IXYS All rights reserved  

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