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IXFX48N60P PDF预览

IXFX48N60P

更新时间: 2024-11-06 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 291K
描述
功能与特色: 优点: 应用:

IXFX48N60P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.72其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):48 A最大漏源导通电阻:0.135 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):110 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFX48N60P 数据手册

 浏览型号IXFX48N60P的Datasheet PDF文件第2页浏览型号IXFX48N60P的Datasheet PDF文件第3页浏览型号IXFX48N60P的Datasheet PDF文件第4页浏览型号IXFX48N60P的Datasheet PDF文件第5页 
PolarHVTM HiPerFET  
Power MOSFET  
IXFK 48N60P  
IXFX 48N60P  
VDSS  
ID2  
RDS(on)  
=
=
600 V  
48 A  
135mΩ  
200 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
(TAB)  
ID25  
IDM  
TC =25° C  
48  
A
A
TC = 25° C, pulse width limited by TJM  
110  
PLUS247 (IXFX)  
IAR  
TC =25° C  
48  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
70  
mJ  
J
2.0  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
20  
V/ns  
(TAB)  
TC =25° C  
830  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source Tab = Drain  
D
= Drain  
Md  
Mounting torque (TO-264)  
1.13/10 Nm/lb.in.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Features  
l
l
l
International standard packages  
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
600  
V
V
Advantages  
3.0  
5.0  
l
200  
nA  
Easy to mount  
Space savings  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1000  
µA  
µA  
l
High power density  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
135 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99375E(02/06)  
© 2006 IXYS All rights reserved  

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