5秒后页面跳转
IXFX420N10T PDF预览

IXFX420N10T

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
7页 208K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXFX420N10T 数据手册

 浏览型号IXFX420N10T的Datasheet PDF文件第2页浏览型号IXFX420N10T的Datasheet PDF文件第3页浏览型号IXFX420N10T的Datasheet PDF文件第4页浏览型号IXFX420N10T的Datasheet PDF文件第5页浏览型号IXFX420N10T的Datasheet PDF文件第6页浏览型号IXFX420N10T的Datasheet PDF文件第7页 
Advance Technical Information  
GigaMOSTM Trench  
HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 420A  
RDS(on) 2.6mΩ  
IXFK420N10T  
IXFX420N10T  
trr  
140ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TAB  
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
420  
160  
1000  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
5
A
J
G
TAB  
D
S
PD  
TC = 25°C  
1670  
20  
W
G = Gate  
D
= Drain  
dV/dt  
IS IDM, VDD VDSS, TJ 175°C  
V/ns  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Avalanche Rated  
20..120 /4.5..27  
z
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
100  
V
V
z
2.5  
5.0  
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
50 μA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z DC Choppers  
z AC Motor Drives  
IDSS  
TJ = 150°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
2.6 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100198(09/09)  

与IXFX420N10T相关器件

型号 品牌 获取价格 描述 数据表
IXFX44N50F IXYS

获取价格

HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
IXFX44N50Q IXYS

获取价格

HiPer FET Power MOSFETs Q-CLASS
IXFX44N55Q IXYS

获取价格

HiPerFET Power MOSFETs Q-CLASS
IXFX44N60 IXYS

获取价格

HiPerFET Power MOSFETs
IXFX44N60 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFX44N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFX44N80P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFX44N80Q3 IXYS

获取价格

MOSFET N-CH 800V 44A PLUS247
IXFX48N50Q IXYS

获取价格

IXFX48N55 IXYS

获取价格

HiPerFET Power MOSFETs