Datasheet > IXFX420N10T

IXFX420N10T

更新时间： 2024-11-21 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	208K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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中文翻译

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数据手册

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IXFX420N10T 数据手册

Advance Technical Information

GigaMOS^TMTrench

HiperFET^TM

Power MOSFET

V_DSS= 100V

I_D25= 420A

R_DS(on)≤ 2.6mΩ

IXFK420N10T

IXFX420N10T

t_rr

≤ 140ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

100

TAB

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

PLUS247 (IXFX)

I_D25

I_L(RMS)

I_DM

T_C= 25°C (Chip Capability)

External Lead Current Limit

T_C= 25°C, Pulse Width Limited by T_JM

420

160

1000

I_A

E_AS

T_C= 25°C

100

TAB

P_D

T_C= 25°C

1670

G = Gate

= Drain

dV/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

V/ns

S = Source

TAB = Drain

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

^zInternational Standard Packages

^zHigh Current Handling Capability

^zFast Intrinsic Diode

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

^zAvalanche Rated

20..120 /4.5..27

Low R_DS(on)

Weight

TO-264

PLUS247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

100

2.5

5.0

Synchronous Recification

^zDC-DC Converters

^zBattery Chargers

± 200 nA

50 μA

^zSwitch-Mode and Resonant-Mode

Power Supplies

^zDC Choppers

^zAC Motor Drives

I_DSS

T_J= 150°C

R_DS(on)

V_GS= 10V, I_D= 60A, Note 1

2.6 mΩ

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

DS100198(09/09)

12 3 4 5 6 7

中文翻译

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