Datasheet > IXFX26N90

IXFX26N90

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	201K
描述
功能与特色: 应用: 优点:

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中文翻译

获取价格

数据手册

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IXFX26N90 数据手册

HiPerFET^TMPower

MOSFETs

V_DSS

I_D25

R_DS(on)

900V 25A

900V 26A

330mΩ

300mΩ

IXFK25N90 IXFX25N90

IXFK26N90 IXFX26N90

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

900

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

(TAB)

25N90

I_D25

I_DM

I_D25

I_DM

T_C= 25°C

100

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

PLUS247

25N90

26N90

T_C= 25°C, pulse width limited by T_JM

104

I_A

T_C= 25°C

25N90

26N90

E_AS

T_C= 25°C

dV/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

V/ns

(TAB)

P_D

T_C= 25°C

560

G = Gate

= Drain

S = Source

TAB = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

Features

^zInternational standard packages

^zAvalanche Rated

^zLow package inductance

^zLow R_DS(ON)HDMOS Process

^zFast intrinsic diode

M_d

Mounting torque (IXFK)

Mounting force (IXFX)

1.13/10

Nm/lb.in.

N/lb.

F_C

20..120 /4.5..27

Weight

TO-264

TO-247

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ. Max.

Applications:

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ± 20V, V_DS= 0V

900

3.0

^zSwitched-mode and resonant-mode

power supplies

5.0

± 200 nA

^zDC-DC Converters

^zBattery chargers

I_DSS

V_DS= 0.8 • V_DSS

V_GS= 0V

100 μA

^zDC choppers

T_J= 125°C

2 mA

^zAC motor drives

25N90

26N90

^zTemperature & lighting controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

330 mΩ

300 mΩ

DS9855D(12/08)

12 3 4 5

中文翻译

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