Q3-Class
VDSS = 300V
ID25 = 70A
RDS(on) 54m
IXFT70N30Q3
IXFH70N30Q3
HiperFETTM
Power MOSFET
D
S
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-268
(IXFT)
G
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
300
300
V
V
TO-247
(IXFH)
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
IDM
TC = 25C
70
A
A
G
TC = 25C, Pulse Width Limited by TJM
210
D
D (Tab)
S
IA
TC = 25C
TC = 25C
70
A
J
EAS
1.5
G = Gate
D
= Drain
S = Source
Tab = Drain
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
50
V/ns
W
830
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
Features
-55 ... +150
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
Low RDS(on) and QG
Weight
TO-268
TO-247
4.0
6.0
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
300
3.0
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Applications
6.0
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
100 nA
IDSS
10 A
Power Supplies
DC Choppers
Temperature and Lighting Controls
TJ = 125C
500 µA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
54 m
DS100380B(1/20)
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