Datasheet > IXFN100N50P

IXFN100N50P

更新时间： 2024-01-08 19:01:42

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	169K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFN100N50P 数据手册

Polar^TMHiperFET^TM

Power MOSFET

V_DSS= 500V

I_D25= 90A

R_DS(on) 49m

IXFN100N50P

t_rr

 200ns

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

miniBLOC

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

500

V_DGR

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

G = Gate

S = Source

D = Drain

250

I_A

E_AS

T_C= 25C

100

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

1040

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features



International Standard Package

Low Intrinsic Gate Resistance

miniBLOC with Aluminum Nitride

Isolation

V_ISOL

50/60 Hz, RMS, t = 1minute

2500

3000

I_ISOL1mA,

t = 1s



M_d

Mounting Torque for Base Plate

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in

Nm/Ib.in

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

Weight

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min.

500

3.0

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode



5.0



200 nA

Power Supplies

AC Motor Control

High Speed Power Switching



I_DSS

25 A

2 mA



T_J= 125C

Appliccation

R_DS(on)

V_GS= 10V, I_D= 50A, Note 1

49 m

DS99497F(8/17)

12 3 4 5 6

中文翻译

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