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IXFM7N80 PDF预览

IXFM7N80

更新时间: 2024-11-04 21:53:39
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IXYS /
页数 文件大小 规格书
4页 80K
描述
HiPerFET Power MOSFETs

IXFM7N80 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliant风险等级:5.84
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:1.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:180 W
最大功率耗散 (Abs):180 W最大脉冲漏极电流 (IDM):28 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFM7N80 数据手册

 浏览型号IXFM7N80的Datasheet PDF文件第2页浏览型号IXFM7N80的Datasheet PDF文件第3页浏览型号IXFM7N80的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFETs  
IXFH7N80 VDSS = 800 V  
IXFM 7 N80 ID (cont) = 7 A  
RDS(on) = 1.4 W  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
trr  
= 250 ns  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C; RGS = 1 MW  
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
7
28  
7
A
A
A
TO-204 AA (IXFM)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
EAR  
TC = 25°C  
18  
5
mJ  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
G
D
PD  
TC = 25°C  
180  
W
G = Gate,  
D = Drain,  
S = Source,  
TAB = Drain  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10  
Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
Applications  
• DC-DC converters  
• Synchronousrectification  
• Battery chargers  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 2.5 mA  
800  
2
V
V
VGS(th)  
4.5  
• AC motor control  
• Temperatureandlightingcontrols  
• Low voltage relays  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
250 mA  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
Advantages  
1
mA  
• Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
• Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
1.4  
W
• High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91527F(7/97)  
1 - 4  

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