HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
100V 67 A 25 mW
100V 75 A 20 mW
trr £ 200 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Obsolete:
IXFM67N10
IXFM75N10
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
100
100
V
V
TJ = 25°C to 150°C; RGS = 1 MW
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
67N10
75N10
67
75
A
A
TO-204 AE (IXFM)
Package
unavailable
TC = 25°C, pulse width limited by TJM
TC = 25°C
67N10
75N10
268
300
A
A
67N10
75N10
67
75
A
A
G
EAR
TC = 25°C
30
5
mJ
D
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G = Gate,
S = Source,
D = Drain,
TAB = Drain
PD
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
Features
●
Internationalstandardpackages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
●
●
●
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
●
●
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
●
●
●
●
DC-DC converters
Synchronousrectification
Battery chargers
Switched-modeandresonant-mode
powersupplies
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
100
2.0
V
V
●
●
●
●
DC choppers
AC motor control
Temperatureandlightingcontrols
Low voltage relays
VGS(th)
VDS = VGS, ID = 4 mA
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Advantages
●
Easy to mount with 1 screw (TO-247)
RDS(on)
VGS = 10 V, ID = 0.5 ID25
67N10
75N10
0.025
0.020
W
W
(isolatedmountingscrewhole)
Space savings
High power density
●
Pulse test, t £ 300 ms, duty cycle d £ 2 %
●
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91521F (10/95)
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