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IXFM40N30 PDF预览

IXFM40N30

更新时间: 2024-11-06 14:56:59
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 755K
描述
功能与特色: 应用: 优点:

IXFM40N30 数据手册

 浏览型号IXFM40N30的Datasheet PDF文件第2页浏览型号IXFM40N30的Datasheet PDF文件第3页浏览型号IXFM40N30的Datasheet PDF文件第4页浏览型号IXFM40N30的Datasheet PDF文件第5页 
HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFH/IXFM35N30  
IXFH40N30  
IXFM40N30  
300V 35 A 100 mW  
300V 40 A 85 mW  
300V 40 A 88 mW  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
Obsolete:  
trr £ 200 ns  
IXFM35N30  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
300  
300  
V
V
TJ = 25°C to 150°C; RGS = 1 MW  
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
35N30  
40N30  
35  
40  
A
A
TO-204 AE (IXFM)  
Package  
unavailable  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
35N30  
40N30  
140  
160  
A
A
35N30  
40N30  
35  
40  
A
A
G
D
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
EAR  
TC = 25°C  
30  
5
mJ  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
PD  
TC = 25°C  
300  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Internationalstandardpackages  
TJM  
Tstg  
• Low R  
HDMOSTM process  
• RuggeDdSp(oon)lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mountingtorque  
300  
°C  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
• DC-DC converters  
• Synchronousrectification  
• Battery chargers  
min. typ. max.  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
VDSS  
VGS = 0 V, ID = 250 mA  
300  
2
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
4
• AC motor control  
• Temperatureandlightingcontrols  
• Low voltage relays  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
200 mA  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
Advantages  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
35N30  
FH40N30  
FM40N30  
0.100  
0.085  
0.088  
W
W
W
• Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
• Space savings  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
• High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91523F (07/00)  
1 - 4  

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