Datasheet > IXFM26N50

IXFM26N50

更新时间： 2024-11-04 22:11:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	159K
描述
HiPerFET Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFM26N50 数据手册

V_DSSI_D25R_DS(on)

HiPerFET^TM

Power MOSFETs

IXFH/IXFM21N50

IXFH/IXFM/IXFT24N50

IXFH/IXFT26N50

500 V 21 A 0.25 Ω

500 V 24 A 0.23 Ω

500 V 26 A 0.20 Ω

N-ChannelEnhancementMode

Highdv/dt, Lowt_rr, HDMOS^TMFamily

t ≤ 250 ns

TO-247 AD (IXFH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

500

T_J= 25°C to 150°C; R_GS= 1 MΩ

(TAB)

V_GS

Continuous

Transient

±20

±30

V_GSM

TO-268 (D3) Case Style

I_D25

I_DM

I_AR

T_C= 25°C

21N50

24N50

26N50

21N50

24N50

26N50

21N50

24N50

26N50

104

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

(TAB)

TO-204 AE (IXFM)

E_AR

T_C= 25°C

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate,

D = Drain,

S = Source,

TAB = Drain

P_D

T_C= 25°C

300

Features

• International standard packages

T_J

-55 ... +150

150

°C

T_JM

T_stg

• Low R

HDMOS^TMprocess

-55 ... +150

• Rugge^Dd^{S (}p^ono⁾lysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

M_d

1.13/10 Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

V_DSS

V_GS= 0 V, I_D= 250 µA

500

V_GS(th)

V_DS= V_GS, I_D= 4 mA

Advantages

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

200 µA

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• High power surface mountable package

• High power density

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

91525H (9/99)

12 3 4

中文翻译

下载PDF

与IXFM26N50相关器件

型号	品牌	获取价格	描述	数据表
IXFM30N40Q	IXYS	获取价格	Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IXFM35N30	IXYS	获取价格	HIPERFET Power MOSFTETs
IXFM40N30	IXYS	获取价格	HIPERFET Power MOSFTETs
IXFM40N30	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFM40N30L	IXYS	获取价格	暂无描述
IXFM42N20	IXYS	获取价格	HiPerFET Power MOSFETs
IXFM50N20	IXYS	获取价格	HiPerFET Power MOSFETs
IXFM50N20	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFM58N20	IXYS	获取价格	HiPerFET Power MOSFETs
IXFM5N100	IXYS	获取价格	HIPERFET Power MOSFTETs