VDSS ID25 RDS(on)
HiPerFETTM
Power MOSFETs
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
500 V 21 A 0.25 Ω
500 V 24 A 0.23 Ω
500 V 26 A 0.20 Ω
N-ChannelEnhancementMode
Highdv/dt, Lowtrr, HDMOSTM Family
t ≤ 250 ns
rr
Obsolete:
IXFM21N50
IXFM24N50
TO-247 AD (IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
TO-268 (D3) Case Style
ID25
IDM
IAR
TC = 25°C
21N50
24N50
26N50
21N50
24N50
26N50
21N50
21
24
26
84
96
104
21
24
A
A
A
A
A
A
A
A
A
G
TC = 25°C, pulse width limited by TJM
TC = 25°C
S
(TAB)
TO-204 AE (IXFM)
24N50
.
Package not
available
26N50
26
EAR
TC = 25°C
30
5
mJ
G
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
V/ns
D
G = Gate,
D = Drain,
S = Source,
TAB = Drain
PD
TC = 25°C
300
W
Features
• International standard packages
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
• Low R
HDMOSTM process
-55 ... +150
• RuggeDdS (pono)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Md
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
VDSS
VGS = 0 V, ID = 250 µA
500
2
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4
Advantages
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
200 µA
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
© 1999 IXYS All rights reserved
91525H (9/99)