HiPerFETTM
Power MOSFETs
IXFX 120N20
IXFK 120N20
VDSS = 200 V
ID25 = 120 A
RDS(on) = 17 mΩ
Single MOSFET Die
trr ≤ 250 ns
Preliminary data sheet
PLUS247TM (IXFX)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
G
D
ID25
ID104
IDM
TC = 25°C (MOSFET chip capability)
TC = 104°C (External lead capability)
TC = 25°C, pulse width limited by TJM
TC = 25°C
120
76
480
120
A
A
A
A
TO-264AA(IXFK)
IAR
EAR
EAS
TC = 25°C
TC = 25°C
64
3
mJ
J
G
(TAB)
D
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
15
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
PD
TJ
TC = 25°C
560
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mounting torque
TO-264
0.9/6 Nm/b.in.
Weight
PLUS 247
TO-264
6
10
g
g
Applications
• DC-DC converters
• Battery chargers
Symbol
TestConditions
Characteristic Values
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
200
2.0
V
4.0 V
±200 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 µA
2 mA
• PLUS 247TM package for clip or spring
mounting
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
17 mΩ
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2002 IXYS All rights reserved
98636-B (9/02)