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IXFH76N07-12 PDF预览

IXFH76N07-12

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 164K
描述
功能与特色: 应用: 优点:

IXFH76N07-12 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:TO-247, 3 PINReach Compliance Code:compliant
风险等级:5.32其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:70 V
最大漏极电流 (Abs) (ID):76 A最大漏极电流 (ID):76 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:360 W
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):304 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH76N07-12 数据手册

 浏览型号IXFH76N07-12的Datasheet PDF文件第2页浏览型号IXFH76N07-12的Datasheet PDF文件第3页浏览型号IXFH76N07-12的Datasheet PDF文件第4页浏览型号IXFH76N07-12的Datasheet PDF文件第5页 
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
IXFH 76 N06-11  
IXFH 76 N06-12  
IXFH 76 N07-11  
IXFH 76 N07-12  
60V  
60V  
70V  
70V  
76 A 11 mW  
76 A 12 mW  
76 A 11 mW  
76 A 12 mW  
Power MOSFETs  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
Preliminary data sheet  
Symbol  
VDSS  
TestConditions  
MaximumRatings  
TO-247 AD  
TJ = 25°C to 175°C  
N06  
N07  
60  
70  
V
V
VDGR  
TJ = 25°C to 175°C; RGS = 10 kW  
N06  
N07  
60  
70  
V
V
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
ID119  
IDM  
TC = 25°C (Chip capability = 125 A)  
TC = 119°C, limited by external leads  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
76  
76  
A
A
A
A
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
304  
100  
IAR  
Features  
EAR  
EAS  
TC = 25°C  
30  
2
mJ  
J
Internationalstandardpackage  
JEDEC TO-247 AD  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
PD  
TC = 25°C  
360  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic Rectifier  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.15/10 Nm/lb.in.  
Weight  
6
g
Applications  
DC-DC converters  
Synchronousrectification  
Battery chargers  
Switched-modeandresonant-mode  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
powersupplies  
DC choppers  
Temperatureandlightingcontrols  
Low voltage relays  
VDSS  
VGS = 0 V, ID = 250 mA  
N06  
N07  
60  
70  
V
V
VGS(th)  
IGSS  
VDS = VGS, ID = 4 mA  
2.0  
3.4  
V
VGS = ±20 VDC, VDS = 0  
±100 nA  
IDSS  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
500 mA  
Advantages  
Easy to mount with 1 screw  
RDS(on)  
VGS = 10 V, ID = 40 A  
76N06/N07-11  
76N06/N07-12  
11 mW  
12 mW  
(isolatedmountingscrewhole)  
Space savings  
High power density  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92785H(12/98)  
1 - 4  

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