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IXFH5N100P PDF预览

IXFH5N100P

更新时间: 2024-11-06 14:56:03
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力特 - LITTELFUSE /
页数 文件大小 规格书
5页 183K
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IXFH5N100P 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.72Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):300 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:2.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH5N100P 数据手册

 浏览型号IXFH5N100P的Datasheet PDF文件第2页浏览型号IXFH5N100P的Datasheet PDF文件第3页浏览型号IXFH5N100P的Datasheet PDF文件第4页浏览型号IXFH5N100P的Datasheet PDF文件第5页 
Preliminary Technical Information  
PolarTM Power MOSFET  
IXFA5N100P  
IXFH5N100P  
IXFP5N100P  
VDSS = 1000V  
ID25 = 5A  
RDS(on) 2.8Ω  
HiPerFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-263 (IXFA)  
G
S
(TAB)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TO-247 (IXFH)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
(TAB)  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
5
A
A
10  
IA  
TC = 25°C  
TC = 25°C  
5
A
TO-220 (IXFP)  
EAS  
300  
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
250  
G
D
S
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
(TAB)  
TJM  
Tstg  
-55 ... +150  
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
TL  
1.6mm (0.062) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Mounting torque  
(TO-220,TO-247)  
1.13 / 10  
Nm/lb.in.  
z International standard packages  
z Dynamic dv/dt Rating  
z Avalanche Rated  
z Low RDS(ON), rugged PolarTM process  
z Low QG  
z Low Drain-to-Tab capacitance  
z Low package inductance  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
1000  
V
V
z
3.0  
6.0  
Applications:  
±100 nA  
z DC-DC converters  
z Battery chargers  
IDSS  
VDS = VDSS  
VGS = 0V  
10 μA  
750 μA  
z Switched-mode and resonant-mode  
power supplies  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
2.8  
Ω
z Uninterrupted power supplies  
z AC motor control  
z High speed power switching  
applications  
DS99923(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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