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IXFH32N100X PDF预览

IXFH32N100X

更新时间: 2024-11-21 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 高电压电源二极管
页数 文件大小 规格书
7页 961K
描述
采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通电阻,因此能够在高电压电源转换应用中实现高功率密度。 这种器件采用电荷补偿原理和专有工艺技术开发,具有低栅

IXFH32N100X 数据手册

 浏览型号IXFH32N100X的Datasheet PDF文件第2页浏览型号IXFH32N100X的Datasheet PDF文件第3页浏览型号IXFH32N100X的Datasheet PDF文件第4页浏览型号IXFH32N100X的Datasheet PDF文件第5页浏览型号IXFH32N100X的Datasheet PDF文件第6页浏览型号IXFH32N100X的Datasheet PDF文件第7页 
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 1000V  
ID25 = 32A  
RDS(on) 220m  
IXFT32N100XHV  
IXFH32N100X  
IXFK32N100X  
TO-268HV  
(IXFT..HV)  
N-Channel Enhancement Mode  
Avalanche Rated  
D
G
G
S
S
D (Tab)  
TO-247  
(IXFH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
1000  
1000  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
D
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
D (Tab)  
TO-264  
(IXFK)  
ID25  
IDM  
TC = 25C  
32  
64  
A
A
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
16  
2
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G
D
D (Tab)  
D = Drain  
890  
S
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Md  
Mounting Torque (TO-247 & TO-264)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
TO-264  
4
6
10  
g
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
1000  
V
V
3.5  
6.0  
Applications  
100 nA  
50 A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
TJ = 125C  
3
mA  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
220 m  
©2019 IXYS CORPORATION, All Rights Reserved.  
DS100906D(11/19)  

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