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IXFH16N80P PDF预览

IXFH16N80P

更新时间: 2024-09-16 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 268K
描述
功能与特色: 优点: 应用:

IXFH16N80P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.7Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):16 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFH16N80P 数据手册

 浏览型号IXFH16N80P的Datasheet PDF文件第2页浏览型号IXFH16N80P的Datasheet PDF文件第3页浏览型号IXFH16N80P的Datasheet PDF文件第4页浏览型号IXFH16N80P的Datasheet PDF文件第5页浏览型号IXFH16N80P的Datasheet PDF文件第6页 
PolarHVTM  
Power MOSFET  
IXFH 16N80P  
IXFT 16N80P  
IXFV 16N80P  
IXFV 16N80PS  
VDSS = 800  
ID25 = 16  
V
A
RDS(on) 600 mΩ  
N-Channel Enhancement Mode  
Fast Recovery Diode  
trr  
250 ns  
Avalanche Rated  
TO-247 (IXFH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-268 (IXFT)  
ID25  
IDM  
TC = 25°C  
16  
40  
A
A
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
TC = 25°C  
TC = 25°C  
8
30  
A
mJ  
J
G
S
D (TAB)  
EAR  
EAS  
1.0  
PLUS220 (IXFV)  
dv/dt  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 5 Ω  
10  
V/ns  
PD  
TC = 25°C  
460  
W
G
D
S
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220SMD (IXFV...S)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
° C  
° C  
Md  
Mounting torque (TO-247)  
Mounting force (PLUS220)  
1.13/10 Nm/lb.in.  
FC  
11..65/2.5..15  
N/lb  
G
S
D (TAB)  
D = Drain  
TAB = Drain  
Weight  
TO-247  
TO-268  
PLUS220 & PLUS220SMD  
6.0  
5.0  
4.0  
g
g
g
G = Gate  
S = Source  
Features  
Symbol  
Test Conditions  
Characteristic Values  
z Fast Recovery diode  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z Unclamped Inductive Switching (UIS)  
rated  
z International standard packages  
z Low package inductance  
- easy to drive and to protect  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0 V  
800  
V
V
3.0  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
Advantages  
z
TJ = 125°C  
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 μs, duty cycle d 2 %  
600 mΩ  
z
High power density  
DS99599E(07/06)  
© 2006 IXYS All rights reserved  

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