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IXFH11N80 PDF预览

IXFH11N80

更新时间: 2023-12-06 20:13:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 691K
描述
功能与特色: 应用: 优点:

IXFH11N80 数据手册

 浏览型号IXFH11N80的Datasheet PDF文件第2页浏览型号IXFH11N80的Datasheet PDF文件第3页浏览型号IXFH11N80的Datasheet PDF文件第4页浏览型号IXFH11N80的Datasheet PDF文件第5页 
HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFH/IXFM11N80  
IXFH/IXFM13N80  
800V 11 A 0.95 W  
800V 13 A 0.80 W  
trr £ 250 ns  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
Obsolete:  
IXFM11N80  
IXFM13N80  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C; RGS = 1 MW  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
11N80  
13N80  
11  
13  
A
A
TO-204 AA (IXFM)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
11N80  
13N80  
44  
52  
A
A
Package  
unavailable  
11N80  
13N80  
11  
13  
A
A
EAR  
TC = 25°C  
30  
5
mJ  
G
D
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
PD  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Applications  
• DC-DC converters  
• Synchronousrectification  
• Battery chargers  
• Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS(th)  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 4 mA  
800  
2.0  
V
V
• DC choppers  
• AC motor control  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
250 mA  
• Temperatureandlightingcontrols  
• Low voltage relays  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
Advantages  
• Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
• Space savings  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
11N80  
13N80  
0.95  
0.80  
W
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
• High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91528F(7/97)  
1 - 4  

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