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IXDR35N60BD1 PDF预览

IXDR35N60BD1

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
5页 189K
描述
D系列IGBT为NPT(非穿通型)器件,适合进行并联。? 较低的尾电流可保持较低的开关损耗,同时还具有短路功能。 该D系列产品还提供方形反向偏压安全工作区(RBSOA),可提高钳位感应负载电流,让

IXDR35N60BD1 数据手册

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IXDR 35N60 BD1  
VCES  
IC25  
VCE(sat) typ= 2.2 V  
= 600 V  
= 38 A  
IGBT  
with optional Diode  
High Speed,  
Low Saturation Voltage  
ISOPLUS 247TM  
C
E
G
G
C
E
Isolated back surface  
G = Gate,  
E = Emitter  
C = Collector ,  
TAB = Collector  
Symbol  
Conditions  
Maximum Ratings  
Features  
NPT IGBT technology  
low switching losses  
low tail current  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 20 kΩ  
no latch up  
VGES  
VGEM  
Continuous  
Transient  
±20  
±±0  
V
V
short circuit capability  
positive temperature coefficient for  
easy paralleling  
MOS input, voltage controlled  
optional ultra fast diode  
Epoxy meets UL 94V-0  
Isolated and UL registered E15±4±2  
IC25  
IC90  
ICM  
TC = 25°C  
±8  
24  
48  
A
A
A
TC = 90°C  
TC = 90°C, tp =1 ms  
RBSOA  
VGE= ±15 V, TJ = 125°C, RG = 10 Ω  
Clamped inductive load, L = ±0 µH  
ICM = 110  
VCEK < VCES  
A
Advantages  
tSC  
VGE= ±15 V, VCE = 600 V, TJ = 125°C  
10  
µs  
(SCSOA)  
RG = 10 Ω, non repetitive  
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
Package for clip or spring mounting  
Space savings  
PC  
TC = 25°C  
IGBT  
125  
50  
W
W
Diode  
TJ  
-55 ... +150  
-55 ... +150  
°C  
°C  
High power density  
Tstg  
VISOL  
FC  
50/60 Hz RMS; IISOL 1 mA  
mounting force with clip  
typical  
2500  
20...120  
6
V~  
N
Typical Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Weight  
g
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Switch-mode and resonant-mode  
power supplies  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
600  
±
V
V
IC = 0.7 mA, VCE = VGE  
VCE = VCES  
5
TJ = 25°C  
TJ = 125°C  
0.1 mA  
mA  
1
IGES  
VCE = 0 V, VGE = ±20 V  
IC = ±5 A, VGE = 15 V  
± 500 nA  
VCE(sat)  
2.2  
2.7  
V
IXYS reserves the right to change limits, test conditions and dimensions  
© 2006 IXYS All rights reserved  
1 - 4  

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TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 50A I(C) | TO-268AA