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IXDN55N120D1 PDF预览

IXDN55N120D1

更新时间: 2024-11-20 14:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
5页 146K
描述
D系列IGBT为NPT(非穿通型)器件,适合进行并联。? 较低的尾电流可保持较低的开关损耗,同时还具有短路功能。 该D系列产品还提供方形反向偏压安全工作区(RBSOA),可提高钳位感应负载电流,让

IXDN55N120D1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-XUFM-X4Reach Compliance Code:compliant
风险等级:2.23其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):100 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):450 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):570 ns
标称接通时间 (ton):170 nsBase Number Matches:1

IXDN55N120D1 数据手册

 浏览型号IXDN55N120D1的Datasheet PDF文件第2页浏览型号IXDN55N120D1的Datasheet PDF文件第3页浏览型号IXDN55N120D1的Datasheet PDF文件第4页浏览型号IXDN55N120D1的Datasheet PDF文件第5页 
IXDN 55N120 D1  
VCES  
IC25  
VCE(sat) typ = 2.3 V  
= 1200 V  
= 100 A  
High Voltage IGBT  
with optional Diode  
Short Circuit SOA Capability  
Square RBSOA  
C
E
miniBLOC, SOT-227 B  
E153432  
E
G
G
E
C
E = Emitter ,  
G = Gate,  
C = Collector  
E = Emitter ①  
Symbol  
Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
Either Emitter terminal can be used as  
Main or Kelvin Emitter  
TJ = 25°C to 150°C; RGE = 20 kΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
Features  
NPT IGBT technology  
low saturation voltage  
IC25  
IC90  
ICM  
TC = 25°C  
100  
62  
A
A
A
TC = 90°C  
low switching losses  
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
easy paralleling  
MOS input, voltage controlled  
optional ultra fast diode  
International standard package  
miniBLOC  
TC = 90°C, tp = 1 ms  
124  
RBSOA  
VGE = 15 V, TJ = 125°C, RG = 22 Ω  
Clamped inductive load, L = 30 µH  
ICM = 100  
VCEK < VCES  
A
tSC  
(SCSOA)  
VGE = 15 V, VCE = VCES, TJ = 125°C  
RG = 22 Ω, non repetitive  
10  
µs  
PC  
TC = 25°C  
IGBT  
Diode  
450  
220  
W
W
Advantages  
VISOL  
50/60 Hz; IISOL 1 mA  
2500  
V~  
Space savings  
Easy to mount with 2 screws  
High power density  
TJ  
-40 ... +150  
-40 ... +150  
°C  
°C  
Tstg  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Typical Applications  
Weight  
30  
g
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninteruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
1200  
4.5  
V
V
IC = 2 mA, VCE = VGE  
VCE = VCES  
6.5  
TJ = 25°C  
TJ = 125°C  
3.8 mA  
mA  
6
IGES  
VCE = 0 V, VGE  
=
20 V  
500 nA  
VCE(sat)  
IC = 55 A, VGE = 15 V  
2.3  
2.8  
V
© 2002 IXYS All rights reserved  
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