是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X4 | Reach Compliance Code: | compliant |
风险等级: | 2.23 | 其他特性: | UL RECOGNIZED |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 100 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE WITH BUILT-IN DIODE |
门极发射器阈值电压最大值: | 6.5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 450 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Nickel (Ni) |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 570 ns |
标称接通时间 (ton): | 170 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXDN602D2TR | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN602PI | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN602SI | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN602SIA | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN602SIATR | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN602SITR | CLARE |
获取价格 |
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN604PI | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN604SI | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN604SIA | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers | |
IXDN604SIATR | CLARE |
获取价格 |
4-Ampere Dual Low-Side Ultrafast MOSFET Drivers |