Datasheet > IXDH30N120D1

IXDH30N120D1

更新时间： 2024-11-06 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
5页	152K
描述
D系列IGBT为NPT（非穿通型）器件，适合进行并联。? 较低的尾电流可保持较低的开关损耗，同时还具有短路功能。该D系列产品还提供方形反向偏压安全工作区(RBSOA)，可提高钳位感应负载电流，让

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXDH30N120D1 数据手册

IXDH 30N120

IXDH 30N120 D1

V_CES

I_C25

V_{CE(sat) typ}= 2.4 V

= 1200 V

= 60 A

High Voltage IGBT

with optional Diode

Short Circuit SOA Capability

Square RBSOA

TO-247 AD (IXDH)

C (TAB)

IXDH 30N120 IXDH 30N120 D1

G = Gate,

C = Collector ,

E = Emitter

TAB = Collector

Symbol

Conditions

Maximum Ratings

Features

• NPT IGBT technology

• low saturation voltage

• low switching losses

• square RBSOA, no latch up

• high short circuit capability

• positive temperature coefficient for

easy paralleling

• MOS input, voltage controlled

• optional ultra fast diode

• International standard packages

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 20 kΩ

1200

V_GES

V_GEM

Continuous

Transient

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 90°C; t_p= 1 ms

RBSOA

_GE= 15 V; T_J= 125°C; R_G= 47 Ω

I_CM= 50

V_CEK< V_CES

Clamped inductive load; L = 30 µH

Advantages

t_SC

(SCSOA)

V_GE= 15 V; V_CE= V_CES; T_J= 125°C

R_G= 47 Ω, non repetitive

µs

• Space savings

• High power density

• IXDT:

P_C

T_C= 25°C;

IGBT

300

135

Diode

surface mountable high power package

T_J

T_stg

-55 ... +150

-40 ... +150

°C

Typical Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninteruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

M_d

Mounting torque

1.1/10 Nm/lb.in.

Weight

Symbol

Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_(BR)CES

V_GE(th)

I_CES

V_GE= 0 V

1200

4.5

I_C= 1 mA; V_CE= V_GE

6.5

V_CE= V_CES

;

T_J= 25°C

T_J= 125°C

1.5 mA

2.5

2.4

I_GES

V_CE= 0 V; V_GE

20 V

500 nA

V_CE(sat)

I_C= 30 A; V_GE= 15 V

2.9

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 4

12 3 4 5

中文翻译

下载PDF

与IXDH30N120D1相关器件

型号	品牌	获取价格	描述	数据表
IXDH35N60B	IXYS	获取价格	IGBT with optional Diode
IXDH35N60B	LITTELFUSE	获取价格	D系列IGBT为NPT（非穿通型）器件，适合进行并联。? 较低的尾电流可保持较低的开关损耗
IXDH35N60BD1	IXYS	获取价格	IGBT with optional Diode
IXDI402PI	IXYS	获取价格	2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SI	IXYS	获取价格	2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SI-16	IXYS	获取价格	2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SIA	IXYS	获取价格	2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402SIA-16	IXYS	获取价格	2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404	IXYS	获取价格	4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404PI	IXYS	获取价格	4 Ampere Dual Low-Side Ultrafast MOSFET Drivers