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IXDH30N120D1 PDF预览

IXDH30N120D1

更新时间: 2024-11-05 03:14:39
品牌 Logo 应用领域
IXYS 晶体二极管晶体管开关电动机控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
4页 90K
描述
High Voltage IGBT with optional Diode

IXDH30N120D1 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:4.18
Is Samacsys:N其他特性:LOW SWITCHING LOSSES
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):435 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):570 ns
标称接通时间 (ton):170 nsBase Number Matches:1

IXDH30N120D1 数据手册

 浏览型号IXDH30N120D1的Datasheet PDF文件第2页浏览型号IXDH30N120D1的Datasheet PDF文件第3页浏览型号IXDH30N120D1的Datasheet PDF文件第4页 
IXDH 30N120  
IXDH 30N120 D1  
IXDT 30N120  
VCES  
IC25  
VCE(sat) typ = 2.4 V  
= 1200 V  
= 60 A  
High Voltage IGBT  
with optional Diode  
IXDT 30N120 D1  
Short Circuit SOA Capability  
Square RBSOA  
C
C
TO-247 AD (IXDH)  
G
G
E
E
G
C
E
AB)  
IXDH 30N120 IXDH 30N120 D1  
IXDT 30N120 IXDT 30N120 D1  
TO--268 AA (IXDT)  
Symbol  
Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
E
C (TAB)  
TJ = 25°C to 150°C; RGE = 20 kW  
G = Gate,  
C = Collector ,  
E = Emitter  
TAB = Collector  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
60  
38  
76  
A
A
A
TC = 90°C  
Features  
TC = 90°C, tp = 1 ms  
NPT IGBT technology  
low saturation voltage  
low switching losses  
RBSOA  
VGE = ±15 V, TJ = 125°C, RG = 47 W  
Clamped inductive load, L = 30 µH  
ICM = 50  
VCEK < VCES  
A
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
easy paralleling  
MOS input, voltage controlled  
optional ultra fast diode  
International standard packages  
tSC  
(SCSOA)  
VGE = ±15 V, VCE = VCES, TJ = 125°C  
RG = 47 W, non repetitive  
10  
µs  
PC  
TC = 25°C  
IGBT  
300  
135  
W
W
Diode  
TJ  
-55 ... +150  
-55 ... +150  
300  
°C  
°C  
°C  
Tstg  
Advantages  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Space savings  
High power density  
IXDT:  
Md  
Mounting torque  
1.1/10 Nm/lb.in.  
surfacemountablehighpowerpackage  
Weight  
6
g
Typical Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninteruptible power supplies (UPS)  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Switch-mode and resonant-mode  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
1200  
4.5  
V
V
power supplies  
IC = 1 mA, VCE = VGE  
VCE = VCES  
6.5  
TJ = 25°C  
TJ = 125°C  
1.5 mA  
mA  
2.5  
2.4  
IGES  
VCE = 0 V, VGE = ± 20 V  
IC = 30 A, VGE = 15 V  
± 500 nA  
VCE(sat)  
2.9  
V
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