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IXDH30N120 PDF预览

IXDH30N120

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
5页 152K
描述
D系列IGBT为NPT(非穿通型)器件,适合进行并联。? 较低的尾电流可保持较低的开关损耗,同时还具有短路功能。 该D系列产品还提供方形反向偏压安全工作区(RBSOA),可提高钳位感应负载电流,让

IXDH30N120 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:not_compliant
风险等级:5.65Is Samacsys:N
其他特性:LOW SWITCHING LOSSES外壳连接:COLLECTOR
最大集电极电流 (IC):60 A集电极-发射极最大电压:1200 V
配置:SINGLE门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):570 ns标称接通时间 (ton):170 ns
Base Number Matches:1

IXDH30N120 数据手册

 浏览型号IXDH30N120的Datasheet PDF文件第2页浏览型号IXDH30N120的Datasheet PDF文件第3页浏览型号IXDH30N120的Datasheet PDF文件第4页浏览型号IXDH30N120的Datasheet PDF文件第5页 
IXDH 30N120  
IXDH 30N120 D1  
VCES  
IC25  
VCE(sat) typ = 2.4 V  
= 1200 V  
= 60 A  
High Voltage IGBT  
with optional Diode  
Short Circuit SOA Capability  
Square RBSOA  
C
E
C
E
TO-247 AD (IXDH)  
G
G
G
C
E
AB)  
IXDH 30N120 IXDH 30N120 D1  
G = Gate,  
C = Collector ,  
E = Emitter  
TAB = Collector  
Symbol  
Conditions  
Maximum Ratings  
Features  
• NPT IGBT technology  
• low saturation voltage  
• low switching losses  
• square RBSOA, no latch up  
• high short circuit capability  
• positive temperature coefficient for  
easy paralleling  
• MOS input, voltage controlled  
• optional ultra fast diode  
• International standard packages  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 20 k  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 90°C; tp = 1 ms  
60  
38  
76  
A
A
A
RBSOA  
V
GE = 15 V; TJ = 125°C; RG = 47 Ω  
ICM = 50  
VCEK < VCES  
A
Clamped inductive load; L = 30 µH  
Advantages  
tSC  
(SCSOA)  
VGE = 15 V; VCE = VCES; TJ = 125°C  
RG = 47 , non repetitive  
10  
µs  
• Space savings  
• High power density  
• IXDT:  
PC  
TC = 25°C;  
IGBT  
300  
135  
W
W
Diode  
surface mountable high power package  
TJ  
Tstg  
-55 ... +150  
-40 ... +150  
°C  
°C  
Typical Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninteruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
power supplies  
Md  
Mounting torque  
1.1/10 Nm/lb.in.  
Weight  
6
g
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
1200  
4.5  
V
IC = 1 mA; VCE = VGE  
6.5  
V
VCE = VCES  
;
TJ = 25°C  
TJ = 125°C  
1.5 mA  
mA  
2.5  
2.4  
IGES  
VCE = 0 V; VGE  
=
20 V  
500 nA  
VCE(sat)  
IC = 30 A; VGE = 15 V  
2.9  
V
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
1 - 4  

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