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IXBT10N170 PDF预览

IXBT10N170

更新时间: 2024-11-19 14:56:23
品牌 Logo 应用领域
力特 - LITTELFUSE 双极性晶体管高压功率控制二极管
页数 文件大小 规格书
6页 548K
描述
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMOSFET大获成功。这种高压器件是并联的理想选择,因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

IXBT10N170 数据手册

 浏览型号IXBT10N170的Datasheet PDF文件第2页浏览型号IXBT10N170的Datasheet PDF文件第3页浏览型号IXBT10N170的Datasheet PDF文件第4页浏览型号IXBT10N170的Datasheet PDF文件第5页浏览型号IXBT10N170的Datasheet PDF文件第6页 
VCES = 1700 V  
IC25 20 A  
VCE(sat) = 3.8 V  
HighVoltage,HighGain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
IXBH 10N170  
IXBT 10N170  
=
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXBT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
(TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
20  
10  
40  
A
A
A
TO-247AD(IXBH)  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
ICM  
VCES  
=
=
20  
1350  
A
V
TAB)  
Clamped inductive load  
G
C
E
PC  
TC = 25°C  
140  
W
TJ  
-55 ... +150  
150  
°C  
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
TJM  
Tstg  
°C  
°C  
-55 ... +150  
Features  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
°C  
°C  
z High Blocking Voltage  
z JEDEC TO-268 surface and  
JEDEC TO-247 AD  
260  
z Low conduction losses  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
z High current handling capability  
z MOS Gate turn-on  
- drive simplicity  
z Molding epoxies meet UL 94 V-0  
flammability classification  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
z AC motor speed control  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
Temperature Coefficent  
IC = 250 µA, VCE = VGE  
Temperature Coefficent  
1700  
3.0  
V
%/K  
V
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
0.10  
5.0  
- 0.24  
%/K  
z Capacitor discharge circuits  
ICES  
VCE = 0.8 VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
10 µA  
100 µA  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100 nA  
z High power density  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
3.4  
4.1  
3.8  
V
V
TJ = 125°C  
DS99048(05/03)  
© 2003 IXYS All rights reserved  

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