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IXBR42N170 PDF预览

IXBR42N170

更新时间: 2024-11-04 19:54:31
品牌 Logo 应用领域
IXYS 功率控制晶体管
页数 文件大小 规格书
5页 164K
描述
Insulated Gate Bipolar Transistor, 57A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, TO-247AD, 3 PIN

IXBR42N170 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:PLASTIC, ISOPLUS247, TO-247AD, 3 PIN
针数:247Reach Compliance Code:unknown
风险等级:5.71其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):57 A
集电极-发射极最大电压:1700 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5.5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1070 ns标称接通时间 (ton):224 ns
Base Number Matches:1

IXBR42N170 数据手册

 浏览型号IXBR42N170的Datasheet PDF文件第2页浏览型号IXBR42N170的Datasheet PDF文件第3页浏览型号IXBR42N170的Datasheet PDF文件第4页浏览型号IXBR42N170的Datasheet PDF文件第5页 
Preliminary Technical Information  
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 1700V  
IC90 = 32A  
VCE(sat) 2.9V  
IXBR42N170  
ISOPLUS247TM  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
b  
C
E
IC25  
IC90  
ICM  
TC = 25°C  
57  
32  
A
A
A
TC = 90°C  
G = Gate  
C = Collector  
E
= Emitter  
TC = 25°C, 1ms  
300  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 100  
A
V
(RBSOA)  
Clamped inductive load  
VCES 1350  
Features  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Silicon chip on Direct-Copper Bond  
(DCB) substrate  
TJM  
Tstg  
z Isolated mounting surface  
z 2500V electrical isolation  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting force  
20..120 / 4.5..27  
Nm/lb.in.  
z Low gate drive requirement  
z High power density  
VISOL  
50/60 Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
IISOL 1mA  
Applications:  
Weight  
5
g
z Switched-mode and resonant-mode  
power supplies  
z Uninterruptible power supplies (UPS)  
z Laser generator  
z Capacitor discharge circuit  
z AC switches  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
1700  
2.5  
V
V
5.5  
ICES  
VCE = 0.8 • VCES  
VGE = 0V  
50 μA  
1.5 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 42A, VGE = 15V, Note 1  
2.9  
V
V
TJ = 125°C  
2.7  
© 2008 IXYS CORPORATION, All rights reserved  
DS100043(10/08)  

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