品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | 二极管 | |
页数 | 文件大小 | 规格书 |
4页 | 181K | |
描述 | ||
Breakover Gen2系列提供各种电压范围的转折二极管,具有极快的导通特性、极低的温度依赖性和极低的漏电流。 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXBP5N140G | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 5.7A I(C), 1400V V(BR)CES, N-Channel, TO-220AB, PLASTIC | |
IXBP5N160G | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBR42N170 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 57A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, ISOPLUS24 | |
IXBR42N170 | LITTELFUSE |
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BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBT10N170 | IXYS |
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High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor | |
IXBT10N170 | LITTELFUSE |
获取价格 |
BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO | |
IXBT12N300 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 30A I(C), 3000V V(BR)CES, N-Channel, TO-268AA, TO-268, | |
IXBT12N300HV | IXYS |
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Insulated Gate Bipolar Transistor, 30A I(C), 3000V V(BR)CES, N-Channel, | |
IXBT16N170 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXBT16N170 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 1700V V(BR)CES, N-Channel, TO-268AA, TO-268, |