Datasheet > IXBOD2-11

IXBOD2-11

更新时间： 2024-11-05 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管
页数	文件大小	规格书
4页	181K
描述
Breakover Gen2系列提供各种电压范围的转折二极管，具有极快的导通特性、极低的温度依赖性和极低的漏电流。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXBOD2-11 数据手册

IXBOD2

Breakover Diode Gen²

(BOD2)

V_BO= 400-1400 V

0.9 A

I_AVM

V_BO

Standard Types

[V]

400 ±±0

±00 ±±0

600 ±±0

700 ±±0

800 ±±0

900 ±±0

1000 ±±0

IXBOD2-04

IXBOD2-0±

IXBOD2-06

IXBOD2-07

IXBOD2-08

IXBOD2-09

IXBOD2-10

Backside: isolated

1100 ±±0

1200 ±±0

1300 ±±0

1400 ±±0

IXBOD2-11

IXBOD2-12

IXBOD2-13

IXBOD2-14

Features / Advantages:

Applications:

Package: FP-Case

• Extra fast turn-on

• Very low temperature dependance

• Very low leakage current

• High voltage circuit protection

• Transient voltage protection

• Trigger device

• Power pulse generators

• Lightning and arcing protection

• Energy discharge circuits

• Battery overvoltage protection

• Solar array protection

• Industry standard outline

• RoHS compliant

• Epoxy meets UL 94V-0

• Soldering pins for PCB mounting

• Base plate: Plastic overmolded tab

• Reduced weight

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, test conditions and dimensions.

Data according ot IEC 60747 and per semiconductor unless otherwise speciﬁed

20210720b

1 - 4

12 3 4

中文翻译

下载PDF

与IXBOD2-11相关器件

型号	品牌	获取价格	描述	数据表
IXBOD2-12	IXYS	获取价格	Breakover Diode Gen
IXBOD2-12	LITTELFUSE	获取价格	Breakover Gen2系列提供各种电压范围的转折二极管，具有极快的导通特性、极低的温
IXBOD2-13	IXYS	获取价格	Breakover Diode Gen
IXBOD2-13	LITTELFUSE	获取价格	Breakover Gen2系列提供各种电压范围的转折二极管，具有极快的导通特性、极低的温
IXBOD2-14	IXYS	获取价格	RVS Blocking BOD,
IXBOD2-14	LITTELFUSE	获取价格	Breakover Gen2系列提供各种电压范围的转折二极管，具有极快的导通特性、极低的温
IXBP5N140G	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 5.7A I(C), 1400V V(BR)CES, N-Channel, TO-220AB, PLASTIC
IXBP5N160G	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBR42N170	IXYS	获取价格	Insulated Gate Bipolar Transistor, 57A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, ISOPLUS24
IXBR42N170	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO