5秒后页面跳转
IXBOD2-11 PDF预览

IXBOD2-11

更新时间: 2024-11-19 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
4页 181K
描述
Breakover Gen2系列提供各种电压范围的转折二极管,具有极快的导通特性、极低的温度依赖性和极低的漏电流。

IXBOD2-11 数据手册

 浏览型号IXBOD2-11的Datasheet PDF文件第2页浏览型号IXBOD2-11的Datasheet PDF文件第3页浏览型号IXBOD2-11的Datasheet PDF文件第4页 
IXBOD2  
Breakover Diode Gen2  
(BOD2)  
VBO = 400-1400 V  
0.9 A  
IAVM  
=
VBO  
Standard Types  
A
[V]  
K
400 ±±0  
±00 ±±0  
600 ±±0  
700 ±±0  
800 ±±0  
900 ±±0  
1000 ±±0  
IXBOD2-04  
IXBOD2-0±  
IXBOD2-06  
IXBOD2-07  
IXBOD2-08  
IXBOD2-09  
IXBOD2-10  
A
K
Backside: isolated  
1100 ±±0  
1200 ±±0  
1300 ±±0  
1400 ±±0  
IXBOD2-11  
IXBOD2-12  
IXBOD2-13  
IXBOD2-14  
Features / Advantages:  
Applications:  
Package: FP-Case  
• Extra fast turn-on  
• Very low temperature dependance  
• Very low leakage current  
• High voltage circuit protection  
Transient voltage protection  
Trigger device  
• Power pulse generators  
• Lightning and arcing protection  
• Energy discharge circuits  
• Battery overvoltage protection  
• Solar array protection  
• Industry standard outline  
• RoHS compliant  
• Epoxy meets UL 94V-0  
• Soldering pins for PCB mounting  
• Base plate: Plastic overmolded tab  
• Reduced weight  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
IXYS reserves the right to change limits, test conditions and dimensions.  
Data according ot IEC 60747 and per semiconductor unless otherwise specified  
20210720b  
© 2020 IXYS All rights reserved  
1 - 4  

与IXBOD2-11相关器件

型号 品牌 获取价格 描述 数据表
IXBOD2-12 IXYS

获取价格

Breakover Diode Gen
IXBOD2-12 LITTELFUSE

获取价格

Breakover Gen2系列提供各种电压范围的转折二极管,具有极快的导通特性、极低的温
IXBOD2-13 IXYS

获取价格

Breakover Diode Gen
IXBOD2-13 LITTELFUSE

获取价格

Breakover Gen2系列提供各种电压范围的转折二极管,具有极快的导通特性、极低的温
IXBOD2-14 IXYS

获取价格

RVS Blocking BOD,
IXBOD2-14 LITTELFUSE

获取价格

Breakover Gen2系列提供各种电压范围的转折二极管,具有极快的导通特性、极低的温
IXBP5N140G LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 5.7A I(C), 1400V V(BR)CES, N-Channel, TO-220AB, PLASTIC
IXBP5N160G LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor,
IXBR42N170 IXYS

获取价格

Insulated Gate Bipolar Transistor, 57A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, ISOPLUS24
IXBR42N170 LITTELFUSE

获取价格

BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO