Datasheet > IW4093BN

IW4093BN

更新时间： 2024-11-14 05:39:55

品牌	Logo	应用领域
IKSEMICON		触发器高压栅
页数	文件大小	规格书
6页	250K
描述
Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS

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IW4093BN 数据手册

TECHNICAL DATA

IW4093B

Quad 2-Input NAND Schmitt Triggers

High-Voltage Silicon-Gate CMOS

The IW4093B consists of four Schmitt-trigger circuits. Each circuit

functions as a two-input NAND gate with Schmitt-trigger action on both

inputs. The gate switches at different points for positive- and negative-

going signals. The difference between the positive voltage (V_Т+) and the

negative voltage (V_Т-) is defined as hysteresis voltage (V_H) (see Fig.1).

•

Operating Voltage Range: 3.0 to 18 V

Maximum input current of 1 μA at 18 V over full package-temperature

range; 100 nA at 18 V and 25°C

ORDERING INFORMATION

IW4093BN Plastic

IW4093BD SOIC

T_A= -55° to 125° C for all packages

•

Noise margin (over full package temperature range):

0.5 V min @ 5.0 V supply

1.0 V min @ 10.0 V supply

1.5 V min @ 15.0 V supply

LOGIC DIAGRAM

PIN ASSIGNMENT

FUNCTION TABLE

Inputs

Output

PIN 14 =V_CC

PIN 7 = GND

L – LOW voltage level

H – HIGH voltage level

Rev. 00

12 3 4 5 6

中文翻译

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