Datasheet > IW4066BD

IW4066BD

更新时间： 2024-11-30 05:39:55

品牌	Logo	应用领域
IKSEMICON		开关高压栅
页数	文件大小	规格书
7页	235K
描述
Quad Bilateral Switch High-Voltage Silicon-Gate CMOS

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IW4066BD 数据手册

TECHNICAL DATA

IW4066B

Quad Bilateral Switch

High-Voltage Silicon-Gate CMOS

The IW4066B is a quad bilateral switch intended for the transmission

or multiplexing of analog or digital signals. In addition, the on-state

resistance is relatively constant over the full input-signal range.

The IW4066B consists of four independent bilateral switches. A single

control signal is required per switch. Both the p and the n device in a

given switch are biased on or off simultaneously by the control signal.(As

show in Fig.1.)The well of the n-channel device on each switch is either

tied to the input when the switch is on or to GND when the switch is off.

This configuration eliminates the variation of the switch-transistor

threshold voltage with input signal, and thus keeps the on-state resistance

low over the full operating-signal range.

ORDERING INFORMATION

IW4066BN Plastic

IW4066BD SOIC

The advantages over single-channel switches include peak input-

signal voltage swings equal to the full supply voltage, and more constant

on-state impedance over the input-signal range.

T_A= -55° to 125° C for all packages

•

Operating Voltage Range: 3.0 to 18 V

Maximum input current of 1 μA at 18 V over full package-temperature

range; 100 nA at 18 V and 25°C

Noise margin (over full package temperature range):

PIN ASSIGNMENT

1.0 V min @ 5.0 V supply

2.0 V min @ 10.0 V supply

2.5 V min @ 15.0 V supply

LOGIC DIAGRAM

FUNCTION TABLE

On/Off

State of

Control Input Analog Switch

Off

PIN 14 =V_CC

PIN 7 = GND

Rev. 00

12 3 4 5 6 7

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