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ITA10B3 PDF预览

ITA10B3

更新时间: 2024-11-25 22:33:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
6页 75K
描述
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION

ITA10B3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOD包装说明:PLASTIC, SO-20
针数:20Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.88Is Samacsys:N
最小击穿电压:10 V最大钳位电压:17 V
配置:COMMON CATHODE, 10 ELEMENTS最小二极管电容:800 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G20JESD-609代码:e0
最大非重复峰值反向功率耗散:300 W元件数量:10
端子数量:20最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:8 V
最大反向电流:4 µA子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

ITA10B3 数据手册

 浏览型号ITA10B3的Datasheet PDF文件第2页浏览型号ITA10B3的Datasheet PDF文件第3页浏览型号ITA10B3的Datasheet PDF文件第4页浏览型号ITA10B3的Datasheet PDF文件第5页浏览型号ITA10B3的Datasheet PDF文件第6页 
ITA6V5B3 / ITA10B3  
ITA18B3 / ITA25B3  
BIDIRECTIONAL TRANSILTM ARRAY  
FOR DATALINE PROTECTION  
Application Specific Discretes  
TM  
A.S.D.  
APPLICATIONS  
Differential data transmission lines protection:  
- RS-232  
- RS-423  
- RS-422  
- RS-485  
FEATURES  
HIGH SURGE CAPABILITY TRANSIL ARRAY  
I
PP = 40 A (8/20µs)  
PEAK PULSE POWER : 300 W (8/20µs)  
SEPARATEDINPUT-OUTPUT  
UPTO 9 BIDIRECTIONALTRANSIL FUNCTIONS  
SO20  
LOWCLAMPINGFACTOR(VCL / VBR) AT HIGH  
CURRENT LEVEL  
LOW LEAKAGE CURRENT  
ESD PROTECTION UP TO 15kV  
FUNCTIONAL DIAGRAM  
DESCRIPTION  
Transil diode arrays provide high overvoltage  
protectionby clamping action. Their instantaneous  
response to transient overvoltages makes them  
particularly suited to protect voltage sensitive  
devicessuch as MOS Technologyand low voltage  
suppliedIC’s.  
The ITA series allies high surge capability against  
energetic pulses with high voltage performance  
against ESD.  
The separated input/output configuration of the  
device ensures improved protection against very  
fast transient overvoltage like ESD by elimination  
of the spikes induced by parasitic inductances  
created by external wiring.  
COMPLIESWITHTHE FOLLOWINGSTANDARDS :  
IEC 1000-4-2 : level 4  
IEC 1000-4-4 : level 4  
IEC 1000-4-5 : level 2  
MIL STD 883C - Method3015-6 : class 3  
(human body model)  
January 1998 Ed: 2  
1/6  

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