Datasheet > ISZ56DP15LM

ISZ56DP15LM

更新时间： 2024-11-19 11:12:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1358K
描述
OptiMOS™ P-channel MOSFETs 150 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.

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ISZ56DP15LM 数据手册

ISZ56DP15LM

MOSFET

OptiMOS^TMꢀPower-Transistor,ꢀ-150ꢀV

PG-TSDSON-8ꢀFL

Features

•ꢀP-channel,ꢀlogicꢀlevel

•ꢀOptimizedꢀforꢀhighꢀandꢀlowꢀswitchingꢀfrequency

•ꢀSuperiorꢀthermalꢀresistance

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 5-8

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

-150

560

Unit

Gate

Pin 4

V_DS

Source

Pin 1-3

R_DS(on),max

I_D

mΩ

*1: Internal body diode

-6.7

Q_oss

-8.7

Q_Gꢀ(0V...4.5V)

-15.2

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

ISZ56DP15LM

PG-TSDSON-8 FL

56DP15L

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-10-13

12 3 4 5 6 7...11

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