Datasheet > ISZ24DP10LM

ISZ24DP10LM

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1369K
描述
OptiMOS? P-channel MOSFETs?100 V?in?PQFN 3.3x3.3?package represents the new technology targeted for?battery management,?load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)?range and improves efficiency at low loads due to low Qg.

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ISZ24DP10LM 数据手册

ISZ24DP10LM

MOSFET

OptiMOS^TMꢀPower-Transistor,ꢀ-100ꢀV

PG-TSDSON-8ꢀFL

Features

•ꢀP-Channel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)ꢀ@ꢀV_GS=4.5ꢀV

•ꢀ100%ꢀavalancheꢀtested

•ꢀLogicꢀLevel

•ꢀEnhancementꢀmode

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 5-8

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 4

Parameter

Value

-100

245

Unit

Source

Pin 1-3

V_DS

*1: Internal body diode

R_DS(on),max

I_D

mΩ

-10.3

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

ISZ24DP10LM

PG-TSDSON-8 FL

24DP10L

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-10-13

12 3 4 5 6 7...11

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