Datasheet > ISZ106N12LM6

ISZ106N12LM6

更新时间： 2024-11-29 11:16:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1375K
描述
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6 mOhm on-resistance. ISZ106N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

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ISZ106N12LM6 数据手册

ISZ106N12LM6

MOSFET

OptiMOS^TMꢀ6ꢀPower-Transistor,ꢀ120ꢀV

S3O8

Features

•ꢀN-channel,ꢀlogicꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀHighꢀavalancheꢀenergyꢀrating

•ꢀ175°Cꢀoperatingꢀtemperature

•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020

Drain

Pin 5-8

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Gate

Pin 4

Source

Pin 1-3

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

*1: Internal body diode

Parameter

Value

120

10.6

Unit

V_DS

R_DS(on),max

I_D

mΩ

Q_oss

Q_Gꢀ(0V...4.5V)

Q_rrꢀ(1000A/µs)

10.4

106

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

ISZ106N12LM6

PG-TSDSON-8

10612L6

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-12-13

12 3 4 5 6 7...11

中文翻译

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