Datasheet > ISP650P06NM

ISP650P06NM

更新时间： 2023-09-03 20:40:17

品牌	Logo	应用领域
英飞凌 - INFINEON		微控制器
页数	文件大小	规格书
11页	1169K
描述
OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.

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ISP650P06NM 数据手册

ISP650P06NM

MOSFET

OptiMOS^TMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV

SOT-223-4

Features

•ꢀP-Channel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀ100%ꢀavalancheꢀtested

•ꢀNormalꢀLevel

•ꢀEnhancementꢀmode

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 2, 4

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 1

Parameter

Value

Unit

Source

Pin 3

V_DS

-60

R_DS(on),max

I_D

mΩ

-3.7

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

ISP650P06NM

PG-SOT223

650P06NM

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2019-03-26

12 3 4 5 6 7...11

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