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ISO5851DWR

更新时间： 2024-10-01 01:13:35
品牌 Logo 应用领域
德州仪器 - TI 栅驱动双极性晶体管光电二极管接口集成电路驱动器
页数 文件大小 规格书
34页 1757K
描述
High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

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中文翻译

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ISO5851DWR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP, SOP16,.4
Reach Compliance Code：compliantFactory Lead Time：6 weeks
风险等级：1.19其他特性：ALSO REQUIRED VEE2 SUPPLY -15V TO 0V
高边驱动器：NO接口集成电路类型：AND GATE BASED IGBT/MOSFET DRIVER
JESD-30 代码：R-PDSO-G16JESD-609代码：e4
长度：10.3 mm湿度敏感等级：2
功能数量：1端子数量：16
最高工作温度：125 °C最低工作温度：-40 °C
最大输出电流：5 A标称输出峰值电流：5 A
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP16,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
电源：5 V认证状态：Not Qualified
座面最大高度：2.65 mm子类别：Peripheral Drivers
最大压摆率：4.5 mA最大供电电压：5.5 V
最小供电电压：3 V标称供电电压：5 V
电源电压1-最大：30 V电源电压1-分钟：15 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
断开时间：0.11 µs接通时间：0.11 µs
宽度：7.5 mmBase Number Matches：1

ISO5851DWR 数据手册

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Sample &  
Buy  
Support &  
Community  
Product  
Folder  
Tools &  
Software  
Technical  
Documents  
ISO5851  
SLLSEN5A –JUNE 2015–REVISED JUNE 2015  
ISO5851 High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver  
with Active Safety Features  
1 Features  
3 Description  
The ISO5851 is a 5.7-kVRMS, reinforced isolated gate  
1
•
•
2.5-A Peak Source and 5-A Peak Sink Currents  
driver for IGBTs and MOSFETs with 2.5-A source  
and 5-A sink current. The input side operates from a  
single 3-V to 5.5-V supply. The output side allows for  
a supply range from minimum 15-V to maximum  
30-V. Two complementary CMOS inputs control the  
output state of the gate driver. The short propagation  
time of 76 ns assures accurate control of the output  
stage.  
Short Propagation Delay: 76 ns (Typ), 110 ns  
(Max)  
•
•
•
2-A Active Miller Clamp  
Output Short-Circuit Clamp  
Fault Alarm upon Desaturation Detection is  
Signaled on FLT and Reset Through RST  
•
•
Input and Output Under Voltage Lock-Out (UVLO)  
with Ready (RDY) Pin Indication  
An internal desaturation (DESAT) fault detection  
recognizes when the IGBT is in an overload  
condition. Upon a DESAT detect the gate driver  
output is driven low to VEE2 potential turning the IGBT  
immediately off.  
Active Output Pull-down and Default Low Outputs  
with Low Supply or Floating Inputs  
•
•
•
•
3-V to 5.5-V Input Supply Voltage  
15-V to 30-V Output Driver Supply Voltage  
CMOS Compatible Inputs  
When desaturation is active, a fault signal is sent  
across the isolation barrier pulling the FLT output at  
the input side low and blocking the isolator input. The  
FLT output condition is latched and can be reset  
through a low-active pulse at the RST input.  
Rejects Input Pulses and Noise Transients  
Shorter Than 20 ns  
•
100-kV/μs Minimum Common-Mode Transient  
When the IGBT is turned off during normal operation  
with bipolar output supply, the output is hard clamp to  
VEE2. If the output supply is unipolar, an active Miller  
clamp can be used, allowing Miller current to sink  
across a low impedance path preventing IGBT to be  
dynamically turned on during high voltage transient  
conditions.  
Immunity (CMTI) at VCM = 1500 V  
•
•
Operating Temperature: –40°C to 125°C Ambient  
Safety and Regulatory Approvals:  
–
8000-VPK VIOTM and 2121-VPK VIORM  
Reinforced Isolation per DIN V VDE V 0884-10  
(VDE V 0884-10):2006-12  
Device Information(1)  
–
–
5700-VRMS Isolation for 1 Minute per UL 1577  
CSA Component Acceptance Notice 5A, IEC  
60950-1, IEC 60601-1 and IEC 61010-1 End  
Equipment Standards  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
ISO5851  
SOIC (16)  
10.30 mm × 7.50 mm  
(1) For all available packages, see the orderable addendum at  
the end of the datasheet.  
–
–
CQC Certification per GB4943.1-2011  
All Certifications are Planned  
Functional Block Diagram  
2 Applications  
•
Isolated IGBT and MOSFET Drives in  
–
–
–
–
–
Industrial Motor Control Drives  
Industrial Power Supplies  
Solar Inverters  
HEV and EV Power Modules  
Induction Heating  
OUT  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
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中文翻译

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ISO5851DWR 替代型号

型号 品牌 替代类型 描述 数据表
ISO5851DW TI

类似代替

 High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

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ISO5851-Q1 TI

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ISO5851QDWQ1 TI

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 		具有有源保护功能的汽车类 5.7kVrms、2.5A/5A 单通道隔离式栅极驱动器 | D
ISO5851QDWRQ1 TI

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ISO5852S TI

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ISO5852S_15 TI

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ISO5852SDW TI

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ISO5852SDWR TI

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 		High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safe
ISO5852S-EP TI

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 		具有分离输出和有源保护功能的 5.7kVrms、2.5A/5A 增强型单通道隔离式栅极驱动
ISO5852SMDWREP TI

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 		具有分离输出和有源保护功能的 5.7kVrms、2.5A/5A 增强型单通道隔离式栅极驱动
ISO5852S-Q1 TI

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 		具有分离输出和有源保护功能的汽车类 5.7kVrms、2.5A/5A 单通道隔离式栅极驱动

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