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ISL73040SEH

更新时间： 2024-11-19 14:57:31
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瑞萨 - RENESAS /
页数 文件大小 规格书
20页 1107K
描述
Radiation Hardened Low Side GaN FET Driver

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ISL73040SEH 数据手册

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DATASHEET  
ISL70040SEH, ISL73040SEH  
Radiation Hardened Low-Side GaN FET Driver  
FN8984  
Rev.10.0  
Jul 30, 2021  
The ISL70040SEH and ISL73040SEH are low-side  
drivers designed to drive enhancement mode Gallium  
Nitride (GaN) FETs in isolated topologies and boost type  
configurations. The drivers operate with a supply voltage  
from 4.5V to 13.2V and have both inverting (INB) and  
non-inverting (IN) inputs to satisfy requirements for  
inverting and non-inverting gate drives with a single  
device.  
Features  
• Wide operating voltage range of 4.5V to 13.2V  
• Up to 14.7V logic inputs (regardless of V level)  
DD  
• Inverting and non-inverting inputs  
• Optimized to drive enhancement mode GaN FETs  
• Internal 4.5V regulated gate drive voltage  
• Independent outputs for adjustable  
turn-on/turn-off speeds  
The ISL70040SEH and ISL73040SEH have a 4.5V gate  
drive voltage (V  
) generated using an internal  
DRV  
• Full military temperature range operation  
regulator that prevents the gate voltage from exceeding  
the maximum gate-source rating of enhancement mode  
GaN FETs. The gate drive voltage also features an  
Undervoltage Lockout (UVLO) protection that ignores  
the inputs (IN/INB) and keeps OUTL turned on to ensure  
• T = -55°C to +125°C  
A
• T = -55°C to +150°C  
J
• Radiation acceptance testing - ISL70040SEH  
• HDR (50-300rad(Si)/s): 100krad(Si)  
• LDR (0.01rad(Si)/s): 75krad(Si)  
the GaN FET is in an OFF state whenever V  
the UVLO threshold.  
is below  
DRV  
The ISL70040SEH and ISL73040SEH inputs can  
withstand voltages up to 14.7V regardless of the V  
voltage. This allows the ISL70040SEH and  
• Radiation acceptance testing - ISL73040SEH  
• LDR (0.01rad(Si)/s): 75krad(Si)  
DD  
ISL73040SEH inputs to be connected directly to most  
PWM controllers. The ISL70040SEH and ISL73040SEH  
split outputs offer the flexibility to adjust the turn-on and  
turn-off speed independently by adding additional  
impedance to the turn-on/off paths.  
• SEE hardness (see the SEE Report for details)  
2
• No SEB/L LET , V = 14.7V: 86MeV•cm /mg  
TH DD  
2
• No SET, LET , V = 13.2V: 86MeV•cm /mg  
TH  
DD  
• Electrically screened to DLA SMD 5962-17233  
The ISL70040SEH and ISL73040SEH operate across  
the military temperature range from -55°C to +125°C  
and are offered in an 8 Ld hermetically sealed ceramic  
Surface Mount Device (SMD) package or die form.  
Applications  
• Flyback and forward converters  
• Boost and PFC converters  
• Secondary synchronous FET drivers  
12V  
22V - 36V  
4.8  
4.7  
-55°C  
+25°C  
4.6  
4.5  
4.4  
4.3  
4.2  
12V  
VDD VDRV  
1
2
3
4
8
7
6
5
+125°C  
ISL70023SEH  
100V GaN FET  
PWM  
Controller  
IN  
OUTH  
OUTL  
INB  
VSS  
ISL7884xSEH  
IS-1825BSEH  
VSSP  
4
5
6
7
8
9
10  
11  
12  
13  
14  
ISL70040SEH/  
ISL73040SEH  
V
(V)  
DD  
Figure 1. ISL70040SEH/ISL73040SEH 8 Ld SMD Package  
Figure 2. VDRV Line Regulation vs Temperature  
FN8984 Rev.10.0  
Jul 30, 2021  
Page 1 of 19  
Copyright © 2017  
1234567...20

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