Datasheet > ISL73024SEH

ISL73024SEH

更新时间： 2024-11-21 14:57:03

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
14页	469K
描述
200V, 7.5A Enhancement Mode GaN Power Transistors

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ISL73024SEH 数据手册

Datasheet

ISL70024SEH, ISL73024SEH

200V, 7.5A Enhancement Mode GaN Power Transistor

The ISL70024SEH and ISL73024SEH are 200V

N-channel enhancement mode GaN power

transistors. These GaN FETs have been

characterized for destructive Single Event Effects

(SEE) and tested for Total Ionizing Dose (TID)

radiation. Applications for these devices include

commercial aerospace, medical, and nuclear power

generation.

Features

▪ Very low r

45mΩ (typical)

DS(ON)

▪ Ultra low total gate charge 2.5nC (typical)

▪ SEE hardness (see SEE report for details)

• SEL/SEB LET (V = 160V, V = 0V):

86MeV•cm /mg

▪ ISL70024SEH radiation acceptance (see TID

report)

GaN’s exceptionally high electron mobility and low

temperature coefficient allows for very low r

• High dose rate (50-300rad(Si)/s): 100krad(Si)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

DS(ON)

while its lateral device structure and majority carrier

diode provide exceptionally low Q and near zero

▪ ISL73024SEH radiation acceptance (see TID

. The end result is a device that can operate at a

report)

higher switching frequency with more efficiency while

reducing the overall solution size.

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ Ultra small hermetically sealed 4 Ld Surface Mount

By combining the exceptional performance of the

GaN FET in a hermetically sealed Surface Mount

Device (SMD) package with manufacturing in a

MIL-PRF-38535 like flow results in best-in-class

power transistors that are ideally suited for high

reliability applications.

Device (SMD) package

• Package area: 42mm

▪ Full military-temperature range operation

• T = -55°C to +125°C

• T = -55°C to +150°C

▪ Qualified to Renesas Rad Hard GaN FET

Applications

▪ Switching regulation

▪ Motor drives

Screening and QCI Flow (R34TB0003EU)

• All screening and QCI is in accordance with

MIL-PRF-38535L Class-V

▪ Relay drives

▪ Inrush protection

▪ Down hole drilling

High reliability industrial

140

ID = 0.8A

ID = 4.0A

ID = 7.2A

ID = 2.4A

ID = 5.6A

120

100

2.5

3.0

3.5

4.0

4.5

5.0

Gate-Source Voltage (V)

Figure 1. ISL70024SEH 4 Ld SMD Package

Figure 2. On-State Resistance (+25°C)

FN8976 Rev.6.02

Jun 9, 2023

Page 1

12 3 4 5 6 7...14

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与ISL73024SEH相关器件

型号	品牌	获取价格	描述	数据表
ISL73024SEHX/SAMPLE	RENESAS	获取价格	Small Signal Field-Effect Transistor
ISL73033SLHM	RENESAS	获取价格	Radiation Hardened 100V GaN FET with Integrated Low-Side GaN FET Driver
ISL73040SEH	RENESAS	获取价格	Radiation Hardened Low Side GaN FET Driver
ISL73040SEHL/PROTO	RENESAS	获取价格	Buffer/Inverter Based Peripheral Driver
ISL73041SEH	RENESAS	获取价格	Radiation Hardened 12V Half Bridge GaN FET Driver
ISL73051ASEH	RENESAS	获取价格	3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator
ISL73052SEH	RENESAS	获取价格	1.5A, Radiation Hardened, Positive, High Voltage LDO
ISL73052SEHX/SAMPLE	RENESAS	获取价格	Adjustable Positive LDO Regulator
ISL73061SEH	RENESAS	获取价格	Radiation Hardened 10A PMOS Load Switch
ISL73061SEHX/SAMPLE	RENESAS	获取价格	Peripheral Driver

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