Datasheet > ISL73023SEH

ISL73023SEH

更新时间： 2023-12-20 18:44:03

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
14页	520K
描述
100V, 60A Enhancement Mode GaN Power Transistor

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ISL73023SEH 数据手册

Datasheet

ISL70023SEH, ISL73023SEH

100V, 60A Enhancement Mode GaN Power Transistor

The ISL70023SEH and ISL73023SEH are 100V

N-channel enhancement mode GaN power

transistors. These GaN FETs have been

characterized for destructive Single Event Effects

(SEE) and tested for Total Ionizing Dose (TID)

radiation. Applications for these devices include

commercial aerospace, medical, and nuclear power

generation.

Features

▪ Very low r

5mΩ (typical)

DS(ON)

▪ Ultra low total gate charge 14nC (typical)

▪ SEE hardness (see SEE report for details)

• SEL/SEB LET (V = 100V, V = 0V):

86MeV•cm /mg

▪ ISL70023SEH radiation accepting testing

• High dose rate (50-300rad(Si)/s): 100krad(Si)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ ISL73023SEH radiation accepting testing

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

The GaN’s exceptionally high electron mobility and

low temperature coefficient allows for very low

, while its lateral device structure and majority

DS(ON)

carrier diode provide exceptionally low Q and zero

. The end result is a device that can operate at a

▪ Ultra small hermetically sealed 4 Ld Surface Mount

higher switching frequency with more efficiency while

reducing the overall solution size.

Device (SMD) package

• Package area: 42mm

By combining the exceptional performance of the

GaN FET in a hermetically sealed Surface Mount

Device (SMD) package with manufacturing in a

MIL-PRF-38535 like flow results in best-in-class

power transistors that are ideally suited for high

reliability applications.

▪ Full military-temperature range operation

• T = -55°C to +125°C

• T = -55°C to +150°C

▪ Qualified to Renesas Rad Hard GaN FET

Screening and QCI Flow (R34TB0003EU)

• All screening and QCI is in accordance with

MIL-PRF-38535L Class-V

Applications

▪ Switching regulation

▪ Motor drives

▪ Relay drives

▪ Inrush protection

▪ Down hole drilling

▪ High reliability industrial

ID = 0.5A

ID = 12.0A

ID = 24.0A

ID = 6.0A

ID = 18.0A

ID = 30.0A

2.5

3.0

3.5

4.0

4.5

5.0

Gate-Source Voltage (V)

Figure 2. On-State Resistance (+25°C)

Figure 1. ISL70023SEH 4 Ld SMD Package

FN8975 Rev.4.02

Jun 9, 2023

Page 1

12 3 4 5 6 7...14

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与ISL73023SEH相关器件

型号	品牌	获取价格	描述	数据表
ISL73024SEH	RENESAS	获取价格	200V, 7.5A Enhancement Mode GaN Power Transistors
ISL73024SEHX/SAMPLE	RENESAS	获取价格	Small Signal Field-Effect Transistor
ISL73033SLHM	RENESAS	获取价格	Radiation Hardened 100V GaN FET with Integrated Low-Side GaN FET Driver
ISL73040SEH	RENESAS	获取价格	Radiation Hardened Low Side GaN FET Driver
ISL73040SEHL/PROTO	RENESAS	获取价格	Buffer/Inverter Based Peripheral Driver
ISL73041SEH	RENESAS	获取价格	Radiation Hardened 12V Half Bridge GaN FET Driver
ISL73051ASEH	RENESAS	获取价格	3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator
ISL73052SEH	RENESAS	获取价格	1.5A, Radiation Hardened, Positive, High Voltage LDO
ISL73052SEHX/SAMPLE	RENESAS	获取价格	Adjustable Positive LDO Regulator
ISL73061SEH	RENESAS	获取价格	Radiation Hardened 10A PMOS Load Switch

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