Datasheet > ISL73020SEH

ISL73020SEH

更新时间： 2024-11-19 14:57:27

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
13页	515K
描述
40V, 65A Enhancement Mode GaN Power Transistor

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ISL73020SEH 数据手册

Datasheet

ISL70020SEH, ISL73020SEH

40V, 65A Enhancement Mode GaN Power Transistors

The ISL70020SEH and ISL73020SEH are 40V

N-channel enhancement mode GaN power

transistors. These GaN FETs have been

characterized for destructive Single Event Effects

(SEE) and tested for Total Ionizing Dose (TID)

radiation. Applications for these devices include

commercial aerospace, medical, and nuclear power

generation.

Features

• Very low r

3.5mΩ (typical)

DS(ON)

• Ultra low total gate charge 19nC (typical)

• ISL70020SEH radiation acceptance testing

○ High dose rate (50-300rad(Si)/s): 100krad(Si)

○ Low dose rate (0.01rad(Si)/s): 75krad(Si)

• ISL73020SEH radiation acceptance testing

○ Low dose rate (0.01rad(Si)/s): 75krad(Si)

• SEE hardness (see the SEE report for details)

The exceptionally high electron mobility and low

temperature coefficient of the GaN allows for very low

, while its lateral device structure and majority

DS(ON)

carrier diode provide exceptionally low Q and zero

. The end result is a device that can operate at a

○ SEL/SEB LET (V = 40V, V = 0V):

TH DS GS

86.4MeV•cm /mg

higher switching frequency with more efficiency while

reducing the overall solution size.

• Ultra small hermetically sealed 4 Ld Surface Mount

Device (SMD) package

By combining the exceptional performance of the

GaN FET in a hermetically sealed Surface Mount

Device (SMD) package with manufacturing in a

MIL-PRF-38535 like flow results in best-in-class

power transistors that are ideally suited for high

reliability applications.

○ Package area: 42mm

• Full military-temperature range operation

○ T = -55°C to +125°C

○ T = -55°C to +150°C

• Qualified to Renesas Rad Hard GaN FET

Screening and QCI Flow (R34TB0003EU)

Applications

• Switching regulation

○ All screening and QCI are in accordance with

MIL-PRF-38535L Class-V

• Motor drives

• Relay drives

• Inrush protection

• Down hole drilling

High reliability industrial

ID = 1A

ID = 10A

ID = 20A

ID = 32A

ID = 40A

2.5

3.0

3.5

4.0

4.5

5.0

Gate-Source Voltage (V)

Figure 2. On-State Resistance (+25°C)

Figure 1. ISL70020SEH 4 Ld SMD Package

R34DS0007EU0105 Rev.1.05

May 30, 2023

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与ISL73020SEH相关器件

型号	品牌	获取价格	描述	数据表
ISL73023SEH	RENESAS	获取价格	100V, 60A Enhancement Mode GaN Power Transistor
ISL73024SEH	RENESAS	获取价格	200V, 7.5A Enhancement Mode GaN Power Transistors
ISL73024SEHX/SAMPLE	RENESAS	获取价格	Small Signal Field-Effect Transistor
ISL73033SLHM	RENESAS	获取价格	Radiation Hardened 100V GaN FET with Integrated Low-Side GaN FET Driver
ISL73040SEH	RENESAS	获取价格	Radiation Hardened Low Side GaN FET Driver
ISL73040SEHL/PROTO	RENESAS	获取价格	Buffer/Inverter Based Peripheral Driver
ISL73041SEH	RENESAS	获取价格	Radiation Hardened 12V Half Bridge GaN FET Driver
ISL73051ASEH	RENESAS	获取价格	3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator
ISL73052SEH	RENESAS	获取价格	1.5A, Radiation Hardened, Positive, High Voltage LDO
ISL73052SEHX/SAMPLE	RENESAS	获取价格	Adjustable Positive LDO Regulator

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