Datasheet > ISL71934M

ISL71934M

更新时间： 2024-11-27 14:57:39

品牌	Logo	应用领域
瑞萨 - RENESAS		光电二极管
页数	文件大小	规格书
17页	2393K
描述
Radiation Tolerant 6GHz SPDT RF Switch

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ISL71934M 数据手册

Datasheet

ISL71934M

Radiation Tolerant SP2T RF Switch, 50MHz to 6000MHz

The ISL71934M is a high reliability, low insertion loss,

50Ω SP2T absorptive RF switch designed for a

multitude of wireless and other RF applications. This

device covers a broad frequency range from 50MHz

to 6000MHz. In addition to providing low insertion

loss, the ISL71934M delivers high linearity and high

isolation performance while providing a 50Ω

Features

▪ High isolation:

• 70dB at 1GHz

• 67dB at 2GHz

• 65dB at 3GHz

• 65dB at 4GHz

▪ High linearity:

• IIP2 of 111dBm

• IIP3 of 64dBm at 2GHz

termination to the unused RF input port.

The ISL71934M uses a single positive supply voltage

of 2.7V to 5.25V supporting three states using either

3.3V or 1.8V control logic.

▪ Wide single 2.75V to 5.25V supply voltage range

▪ 3.3V and 1.8V compatible control logic

▪ Operating temperature: -55°C to +125°C

▪ 3x3mm 16-TQFN package

Competitive Advantage

The ISL71934M provides the following advantages:

▪ Constant impedance K during switching

|Z|

▪ Ni/Pd/Au lead finish (Tin (Sn)-free)

transition

▪ Characterized radiation levels

▪ Insertion loss = 0.79dB (at 2GHz)

▪ RFX to RFC isolation = 67dB (at 2GHz)

▪ IIP3 = +64dBm (at 2GHz)

• Low Dose Rate (LDR) (0.01rad(Si)/s): 30krad(Si)

• Single event burnout LET 43MeV•cm /mg

▪ Manufactured using SOI wafer fab process

▪ Active port operating power handling = 34dBm

▪ Term port operating power handling = 27dBm

VDD VCTL EN

Applications

▪ Satellite communications system

Control

Circuit

▪ Antenna switching

RF2

▪ IF switching

50Ω

▪ Digital pre-distortion feedback

RFC

50Ω

RF1

K_|Z|

Figure 1. Block Diagram

R34DS0010EU0101 Rev.1.1

Feb 24, 2021

Page 1

12 3 4 5 6 7...17

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