Single Event and Total Dose Hardened, High-Speed,
Dual Output PWMs
IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH,
ISL71823BSRH
The single event and total dose hardened pulse width
modulators are designed to be used in high frequency,
Features
• Electrically screened to DLA SMD# 5962-02511
• QML qualified per MIL-PRF-38535 requirements
switching power supplies in either voltage or current-mode
configurations. These designs include a precision voltage
reference, a low power start-up circuit, a high frequency
oscillator, a wide-band error amplifier and a fast current-limit
comparator.
• EH version is wafer-by-wafer acceptance tested to
50krad(Si) (LDR)
• Radiation environment
The IS-1825ASRH, IS-1825BSRH and IS-1825BSEH feature
dual, alternating output operating from zero to less than 50%
duty-cycle, while the ISL71823ASRH and ISL71823BSRH
features dual, in-phase output operating from zero to less than
100% duty cycle. The “B” versions test the delay from clock out
to PWM output switching after power has been applied to the
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated
2
- SEU immune. . . . . . . . . . . . . LET = 35MeV/mg/cm (max)
• Oscillator frequency. . . . . . . . . . . . . . . . . . . . . . . . 1MHz (max)
• High output drive current . . . . . . . . . . . . . . . . . . 1A peak (typ)
• Low start-up current. . . . . . . . . . . . . . . . . . . . . . . 300µA (max)
modulator (t
) (see Figure 3). The ISL-825BSEH is
PWM
wafer-by-wafer acceptance tested to 50krad(Si) at a low dose
rate of 10mrad(Si)/s.
Constructed with the Intersil Rad-hard Silicon Gate (RSG)
dielectrically isolated BiCMOS process, these devices are
immune to single event latch-up and have been specifically
designed to provide a high level of immunity to single event
transients. All specified parameters are guaranteed and tested
for 300krad(Si) total dose performance.
• Undervoltage lockout
- Start threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8V (max)
- Stop threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.6V (min)
- Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mV (min)
• Pulse-by-pulse current limiting
• Programmable leading edge blanking
Related Literature
• IS-1825ASRH Radiation Test Report
• IS-1825ASRH Single Event Effects Report
Applications
• Voltage or current-mode switching power supplies
• Control of high current MOSFET drivers
• Motor speed and direction control
Pin Configurations
IS1-1825ASRH, IS1-1825BSRH, IS-1825BSEH
ISL71823BSRHVD, ISL71823ASRHQD
(CDIP2-T16 SBDIP)
IS9-1825ASRH, IS9-1825BSRH, IS9-1825BSEH
ISL71823ASRHQF, ISL71823BSRHVF
(CDFP4-F20 FLATPACK)
TOP VIEW
TOP VIEW
NC
INV
1
20
19
18
17
16
15
14
13
12
11
VREF
VCC
INV
NON-INV
E/A OUT
CLK/LEB
RT
1
2
3
4
5
6
7
8
16 VREF
15 VCC
2
NON-INV
E/A OUT
CLK/LEB
RT
3
OUT B
PGND
VC
14 OUT B
13 VC
4
5
12 PGND
11 OUT A
10 GND
6
VC
CT
CT
7
PGND
OUT A
GND
RAMP
SS
8
RAMP
SS
9
9
ILIM/SD
NC
10
ILIM/SD
May 23, 2013
FN9065.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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